Lateral composition modulation in AlAs/InAs short period superlattices grown on InP(001)

1997 ◽  
Vol 70 (11) ◽  
pp. 1402-1404 ◽  
Author(s):  
J. Mirecki Millunchick ◽  
R. D. Twesten ◽  
D. M. Follstaedt ◽  
S. R. Lee ◽  
E. D. Jones ◽  
...  
Keyword(s):  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

scholarly journals Intermixing and lateral composition modulation in GaAs/GaSb short period superlattices

2003 ◽  
Vol 94 (3) ◽  
pp. 1667-1675 ◽  
Author(s):  
C. Dorin ◽  
J. Mirecki Millunchick ◽  
C. Wauchope
Keyword(s):  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

Profiling Composition Variations in Composition-Modulated GaP/InP Short-Period Superlattices Using Resonance Raman Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
H. M. Cheong ◽  
Yong Zhang ◽  
A. G. Norman ◽  
J. D. Perkins ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Gap ◽  
Resonance Raman ◽  
Band Gap Energy ◽  
Resonance Raman Scattering ◽  
Rich Region ◽  
Gap Energy ◽  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

AbstractWe use resonance Raman scattering (RRS) and electroreflection (ER) measurements to profile the the composition and strain variations in laterally composition-modulated (CM) GaP/InP short-period superlattices (SPS's). The ER spectra of a GaP2.2/InP2.0 SPS give the fundamental band-gap energy at 1.69±0.05eV, which is about 210 meV lower than the band gap energy of a GaInP random alloy with the same overall composition. The RRS measurements reveal strong dependences of the phonon spectrum on the polarization and the excitation energy. In RRS spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical (LO) phonon redshifts by 4.0±0.5 cm−1 near the resonance with the fundamental energy gap. On the other hand, when the polarizations are orthogonal to the composition modulation, the LO phonons redshift as much as 16 cm−1 at low excitation energies. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02. Our result also indicates that there are small volumes (less than 1% volume fraction) with very high In mole fraction.

Optical Properties of Quantum-Wires Grown Using Lateral Composition Modulation Induced by (InP)1/(GaP)1 Short-Period Superlattices

2003 ◽  
Vol 794 ◽  
Author(s):  
J. D. Song ◽  
J. M. Kim ◽  
Y. T. Lee
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Strong Dependence ◽  
Composition Modulation ◽  
Transmission Electron Microscopy Measurement ◽  
Peak Energy ◽  
Short Period ◽  
Energy Peak ◽  
Short Period Superlattices ◽  
Microscopy Measurement

ABSTRACTThe optical properties of quantum wires (QWRs) grown using lateral composition modulation (LCM) were studied by photoluminescence (PL) measurement as a function cryostat temperature (Tcr). 3 stacked arrays of QWRs were formed by sequential growth of ∼ 180 Å-thick LCM layers (lateral period: ∼ 90 Å) induced by (InP)1/(GaP)1 short-period superlattices, and 200 Å-thick InGaP spacers at the growth temperature of 490 °C. The formation of QWRs was confirmed by a transmission electron microscopy measurement. By the analysis of the dependence of PL intensity and peak energy of the QWRs on Tcr, the origin of higher energy peak (H) and lower energy peak (L) were investigated. While behavior of the H peak is similar to that of an ordered InGaP, the L peak shows the insensitivity of PL peak energy to Tcr. This is attributed to compensation of the bandgap by competition of strain in the QWR region and indicates the L peak is related to the QWRs. Strong dependence of the L peak on the position of polarizer also supports this. Additionally, the PL peak intensity of the L peak has the maximum value not at the lowest Tcr (10 K) but at 50 K, while the H peak decrease continuously as T increases. We introduced the idea of compensation of the thermal expansion coefficient to explain this phenomenon.

scholarly journals Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices

1998 ◽  
Vol 2 (1-4) ◽  
pp. 325-329 ◽  
Author(s):  
D.M Follstaedt ◽  
R.D Twesten ◽  
J Mirecki Millunchick ◽  
S.R Lee ◽  
E.D Jones ◽  
...  
Keyword(s):  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

X-Ray Characterization of Nanostructured Semiconductor Short-Period Superlattices

2002 ◽  
Vol 749 ◽  
Author(s):  
Jianhua Li ◽  
S. C. Moss ◽  
V. Holy ◽  
A.G. Norman ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Film Growth ◽  
Substrate Surface ◽  
Cost Effective ◽  
Mbe Growth ◽  
X Ray ◽  
Composition Modulation ◽  
Global Strain ◽  
Cost Effective Approach ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTSpontaneous lateral composition modulation during semiconductor thin film growth offers a particularly versatile and cost-effective approach to manufacture nanoscale devices. Recent experimental and theoretical studies have revealed that regular lateral composition modulation can be achieved via MBE growth of the so-called short-period superlattices and can be optimized via appropriate control of the global strain, substrate surface, and processing conditions. To characterize this phenomenon, we used synchrotron x-ray scattering to identify the interfacial morphology and laterally modulated composition profile of nearly strain-balanced InAs/AlAs short-period superlattices. Our results were compared with a theoretical model. It is shown that the lateral composition modulation is predominately caused by a vertically correlated morphlogical undulation of the superlattice layers.

Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

2001 ◽  
Vol 90 (10) ◽  
pp. 5086-5089 ◽  
Author(s):  
Jin Dong Song ◽  
Young-Woo Ok ◽  
Jong Min Kim ◽  
Yong Tak Lee ◽  
Tae-Yeon Seong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

Composition Modulation in GaAs/GaSb Short Period Superlattices

2002 ◽  
Vol 8 (S02) ◽  
pp. 1104-1105
Author(s):  
C.J. Wauchope ◽  
C. Dorin ◽  
J. Mirecki Millunchick
Keyword(s):  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices

scholarly journals Lateral composition modulation in short period superlattices: The role of growth mode

2001 ◽  
Vol 79 (25) ◽  
pp. 4118-4120 ◽  
Author(s):  
C. Dorin ◽  
J. Mirecki Millunchick ◽  
Y. Chen ◽  
B. G. Orr ◽  
C. A. Pearson
Keyword(s):  
Growth Mode ◽  
Composition Modulation ◽  
Short Period ◽  
Short Period Superlattices
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