Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices

1997 ◽  
Vol 70 (10) ◽  
pp. 1317-1319 ◽  
Author(s):  
Lisa Sugiura
Keyword(s):  
Dislocation Motion ◽  
Compound Semiconductor ◽  
Light Emitting ◽  
Light Emitting Devices

Nitride Laser Diodes With InGaN Based Mqw Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
Lisa Sugiura ◽  
Jobji Nishio ◽  
Masaaki Onomura ◽  
Shin-Ya Nunoue ◽  
Kazuhiko Itaya ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Performance ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Dislocation Motion ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mocvd Growth ◽  
Short Wavelength Light ◽  
Nitride Laser

AbstractAdvantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Probing local photophysical properties in perovskite based light-emitting devices

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks
Keyword(s):  
Photophysical Properties ◽  
Light Emitting ◽  
Light Emitting Devices

Color Variable Bipolar/AC Light-Emitting Devices Based on Conjugated Polymers

1997 ◽  
Author(s):  
Y. Z. Wang ◽  
D. D. Gebler ◽  
D. K. Fu ◽  
T. M. Swager ◽  
A. J. Epstein
Keyword(s):  
Conjugated Polymers ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Exciton Coupling and Conformational Changes Impacting the Excited State Properties of Metal Organic Frameworks

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4230
Author(s):  
Andreas Windischbacher ◽  
Luca Steiner ◽  
Ritesh Haldar ◽  
Christof Wöll ◽  
Egbert Zojer ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Photophysical Properties ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Red Shift ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Exciton Coupling ◽  
Metal Organic ◽  
Crystalline Metal

In recent years, the photophysical properties of crystalline metal-organic frameworks (MOFs) have become increasingly relevant for their potential application in light-emitting devices, photovoltaics, nonlinear optics and sensing. The availability of high-quality experimental data for such systems makes them ideally suited for a validation of quantum mechanical simulations, aiming at an in-depth atomistic understanding of photophysical phenomena. Here we present a computational DFT study of the absorption and emission characteristics of a Zn-based surface-anchored metal-organic framework (Zn-SURMOF-2) containing anthracenedibenzoic acid (ADB) as linker. Combining band-structure and cluster-based simulations on ADB chromophores in various conformations and aggregation states, we are able to provide a detailed explanation of the experimentally observed photophysical properties of Zn-ADB SURMOF-2: The unexpected (weak) red-shift of the absorption maxima upon incorporating ADB chromophores into SURMOF-2 can be explained by a combination of excitonic coupling effects with conformational changes of the chromophores already in their ground state. As far as the unusually large red-shift of the emission of Zn-ADB SURMOF-2 is concerned, based on our simulations, we attribute it to a modification of the exciton coupling compared to conventional H-aggregates, which results from a relative slip of the centers of neighboring chromophores upon incorporation in Zn-ADB SURMOF-2.

Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 based flexible perovskite light-emitting devices with excellent mechanical bending durability

2019 ◽  
Vol 723 ◽  
pp. 33-38 ◽  
Author(s):  
Minhuan Wang ◽  
Yulin Feng ◽  
Qingshun Dong ◽  
Jiming Bian ◽  
Chen Wang ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Mechanical Bending
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