Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion

1997 ◽  
Vol 70 (9) ◽  
pp. 1125-1127 ◽  
Author(s):  
D.-J. Jang ◽  
J. T. Olesberg ◽  
M. E. Flatté ◽  
Thomas F. Boggess ◽  
T. C. Hasenberg
1992 ◽  
Vol 06 (12) ◽  
pp. 703-716 ◽  
Author(s):  
K. T. TSEN

Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.


Author(s):  
Stephane A. Boubanga-Tombet ◽  
Michael R. C. Williams ◽  
Jeremy B. Wright ◽  
George T. Wang ◽  
Rohit P. Prasankumar

2020 ◽  
Vol 105 ◽  
pp. 109854
Author(s):  
Muhammad Ali Johar ◽  
Aadil Waseem ◽  
Hyun-Gyu Song ◽  
Mostafa Afifi Hassan ◽  
Indrajit V. Bagal ◽  
...  

1988 ◽  
Vol 40-41 ◽  
pp. 585-586
Author(s):  
Zhongying Xu ◽  
Yuzhang Li ◽  
Jizong Xu ◽  
Baozhen Zheng ◽  
Junying Xu ◽  
...  

2000 ◽  
Author(s):  
Mark S. Hybertsen ◽  
Muhammad A. Alam ◽  
Gene A. Baraff ◽  
R. Kent Smith ◽  
Gleb E. Shtengel ◽  
...  

1990 ◽  
Vol 46 (2) ◽  
pp. 137-145 ◽  
Author(s):  
Weikun Ge ◽  
Zhongying Xu ◽  
Yuzhang Li ◽  
Zunying Xu ◽  
Jizhong Xu ◽  
...  

Physica B+C ◽  
1985 ◽  
Vol 134 (1-3) ◽  
pp. 509-513 ◽  
Author(s):  
R.A. Höpfel ◽  
J. Shah ◽  
A.C. Gossard ◽  
W. Wiegmann

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