Optical gain in optically pumped cubic GaN at room temperature

1997 ◽  
Vol 70 (9) ◽  
pp. 1076-1077 ◽  
Author(s):  
R. Klann ◽  
O. Brandt ◽  
H. Yang ◽  
H. T. Grahn ◽  
K. H. Ploog
Keyword(s):  
Room Temperature ◽  
Optical Gain ◽  
Optically Pumped ◽  
Cubic Gan

Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

2004 ◽  
Vol 84 (16) ◽  
pp. 2998-3000 ◽  
Author(s):  
E. Kuokstis ◽  
C. Q. Chen ◽  
J. W. Yang ◽  
M. Shatalov ◽  
M. E. Gaevski ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Emission ◽  
Optical Gain ◽  
Optically Pumped ◽  
Optically Pumped Laser

Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature

1994 ◽  
Vol 64 (12) ◽  
pp. 1535-1536 ◽  
Author(s):  
S. T. Kim ◽  
H. Amano ◽  
I. Akasaki ◽  
N. Koide
Keyword(s):  
Room Temperature ◽  
Optical Gain ◽  
Optically Pumped ◽  
Double Heterostructure

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

Long room-temperature electron spin lifetimes in highly doped cubic GaN

2010 ◽  
Vol 97 (6) ◽  
pp. 062101 ◽  
Author(s):  
J. H. Buß ◽  
J. Rudolph ◽  
T. Schupp ◽  
D. J. As ◽  
K. Lischka ◽  
...  
Keyword(s):  
Electron Spin ◽  
Room Temperature ◽  
Cubic Gan ◽  
Temperature Electron

scholarly journals Cubic InGaN Grown by MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

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