Self-organized Fe nanowire arrays prepared by shadow deposition on NaCl(110) templates

1997 ◽  
Vol 70 (8) ◽  
pp. 1043-1045 ◽  
Author(s):  
Akira Sugawara ◽  
T. Coyle ◽  
G. G. Hembree ◽  
M. R. Scheinfein
2012 ◽  
Vol 116 (37) ◽  
pp. 20121-20126 ◽  
Author(s):  
X. Wendy Gu ◽  
Nitzan Shadmi ◽  
Tohar S. Yarden ◽  
Hagai Cohen ◽  
Ernesto Joselevich

2007 ◽  
Vol 60 (4) ◽  
pp. 409-411 ◽  
Author(s):  
U. Schwingenschlögl ◽  
C. Schuster

2014 ◽  
Vol 48 (18) ◽  
pp. 184003 ◽  
Author(s):  
Francesco Bisio ◽  
Grazia Gonella ◽  
Giulia Maidecchi ◽  
Renato Buzio ◽  
Andrea Gerbi ◽  
...  

2014 ◽  
Vol 216 ◽  
pp. 202-206 ◽  
Author(s):  
Raheleh Mohammadpour ◽  
Hassan Ahmadvand ◽  
Azam Iraji zad

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3327
Author(s):  
Shan Ding ◽  
Liying Zhang ◽  
Yuewen Li ◽  
Xiangqian Xiu ◽  
Zili Xie ◽  
...  

In this paper, based on the different etching characteristics between GaN and Ga2O3, large-scale and vertically aligned β-Ga2O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. GaN micro-/nanowire arrays were prepared first by inductively coupled plasma (ICP) etching using self-organized or patterning nickel masks as the etching masks, and then the Ga2O3 shell layer converted from GaN was formed by thermal oxidation, resulting in GaN@Ga2O3 micro-/nanowire arrays. After the GaN core of GaN@Ga2O3 micro-/nanowire arrays was removed by ICP etching, hollow Ga2O3 tubes were obtained successfully. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can also be controlled with the thermal oxidation conditions. These vertical β-Ga2O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices.


2008 ◽  
Vol 254 (13) ◽  
pp. 3935-3938 ◽  
Author(s):  
Yingru Kang ◽  
Jianling Zhao ◽  
Jinliang Tao ◽  
Xixin Wang ◽  
Yangxian Li

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