Thermal oxidation of free-standing porous silicon films

1997 ◽  
Vol 70 (5) ◽  
pp. 637-639 ◽  
Author(s):  
J. Salonen ◽  
V.-P. Lehto ◽  
E. Laine
1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.


1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.


1995 ◽  
Vol 405 ◽  
Author(s):  
V. Klimov ◽  
D. Mcbranch ◽  
V. Karavanskii

AbstractLarge photo-induced absorption signals were observed in free standing porous silicon films in the spectral range from 1.1 to 2.5 eV using a femtosecond pump and probe technique. The measured nonlinear signal has a very fast component with relaxation constants from 800 fs to tens of picoseconds superimposed on the slow-relaxing thermal background. The spectral structure and relaxation dynamics of the short-lived component of transient absorption show the presence of molecular-like Si complexes with well defined energy levels and spectrally uniform picosecond relaxation dynamics.


1994 ◽  
Vol 49 (8) ◽  
pp. 5386-5397 ◽  
Author(s):  
Y. H. Xie ◽  
M. S. Hybertsen ◽  
William L. Wilson ◽  
S. A. Ipri ◽  
G. E. Carver ◽  
...  

1997 ◽  
Vol 486 ◽  
Author(s):  
J. Salonen ◽  
K. Saarinen ◽  
J. Peura ◽  
J. Vilnikanoja ◽  
I. Salomaa ◽  
...  

AbstractWe have investigated optical constants of free-standing porous silicon films by dispersive Fourier transform spectroscopy (DFTS) in the NIR-VIS range. This allows the spectral variation of both the absorption coefficient and the refractive index of a material to be determined from the measurements of the attenuation and phase shift imposed on an electromagnetic wave by its interaction with a specimen. Using these optical constants, we have studied the complex dielectric function and the complex conductivity. To avoid the additive error in the absorption spectra arising from the pseudocoherence, we measured the transmission spectra by conventional Fourier transform spectroscopy (FTS). Using the refraction spectrum derived from the DFTS measurements, we have corrected for reflection losses in calculation of the absorption spectrum from the FTS transmission spectrum. The changes in the absorption coefficient and the refractive index due to oxidation, which is the most common aging phenomenon in porous silicon, have been studied using samples with different types of oxidization.


1993 ◽  
Vol 57 (1-6) ◽  
pp. 217-221 ◽  
Author(s):  
G. Vincent ◽  
F. Leblanc ◽  
I. Sagnes ◽  
P.A. Badoz ◽  
A. Halimaoui

1998 ◽  
Vol 14 (07) ◽  
pp. 577-580
Author(s):  
Xu Dong-Sheng ◽  
◽  
Guo Guo-Lin ◽  
Gui Lin-Lin ◽  
Zhang Bo-Rui ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
J. Von Behren ◽  
L. Tsybeskov ◽  
P. M. Fauchet

ABSTRACTUsing special electrochemical etching and lift-off steps, we have fabricated large-area freestanding porous silicon films in the thickness range from 0.1 μm to 50 μm. Their transmission is near 100% in the near infrared which is indicative of very high porosity/low index of refraction films. These optically flat and homogeneous films exhibit no surface and bulk scattering, despite the fact that they did not undergo supercritical drying. The relationship between the absorption coefficient, the luminescence spectrum, and the chemical and structural properties is examined as a function of preparation and post-treatment conditions. Because of their superior optical properties, these films are suitable for many device applications.


1999 ◽  
Vol 103 (26) ◽  
pp. 5468-5471 ◽  
Author(s):  
Dongsheng Xu ◽  
Guolin Guo ◽  
Linlin Gui ◽  
Youqi Tang ◽  
B. R. Zhang ◽  
...  

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