Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure

1997 ◽  
Vol 70 (25) ◽  
pp. 3419-3421 ◽  
Author(s):  
N. Cao ◽  
B. B. Elenkrig ◽  
J. G. Simmons ◽  
D. A. Thompson ◽  
N. Puetz
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Laser Structure ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser ◽  
Free Vacancy

Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

2001 ◽  
Vol 78 (21) ◽  
pp. 3199-3201 ◽  
Author(s):  
A. S. W. Lee ◽  
M. MacKenzie ◽  
D. A. Thompson ◽  
J. Bursik ◽  
B. J. Robinson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Group V ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

scholarly journals Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 355-360 ◽  
Author(s):  
Stephen Bennett ◽  
Christopher M. Snowden ◽  
Stavros Iezekiel
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Period Doubling ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Wide Range ◽  
Multiple Quantum Well Laser ◽  
Good Agreement

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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