Surface morphology and growth mechanism of YBa2Cu3O7−y films by metalorganic chemical vapor deposition using liquid sources

1996 ◽  
Vol 69 (6) ◽  
pp. 845-847 ◽  
Author(s):  
Y. Yoshida ◽  
Y. Ito ◽  
I. Hirabayashi ◽  
H. Nagai ◽  
Y. Takai
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Growth Mechanism of YBa2Cu4O8(124) Phase in Metalorganic Chemical Vapor Deposition Film

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L725-L727 ◽  
Author(s):  
Harumi Hayashi ◽  
Yasuji Yamada ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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