Strained InGaAsP/InGaAsP/InAsP multi‐quantum well structure for polarization insensitive electroabsorption modulator with high power saturation

1996 ◽  
Vol 69 (27) ◽  
pp. 4131-4132 ◽  
Author(s):  
A. Ougazzaden ◽  
F. Devaux
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Electroabsorption Modulator ◽  
Quantum Well Structure ◽  
Polarization Insensitive ◽  
Multi Quantum Well

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

2009 ◽  
Vol 42 (14) ◽  
pp. 145109 ◽  
Author(s):  
W H M Feu ◽  
J M Villas-Bôas ◽  
L A Cury ◽  
P S S Guimarães ◽  
G S Vieira ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Memory Effect ◽  
Quantum Well Structure ◽  
Weakly Coupled ◽  
Multi Quantum Well

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

1996 ◽  
Vol 69 (11) ◽  
pp. 1568-1570 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

1996 ◽  
Vol 35 (Part 2, No. 2B) ◽  
pp. L217-L220 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser
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