Synthesis of InP‐based 1.3 μm band gap pseudoalloy by organometallic vapor phase epitaxy

1996 ◽  
Vol 69 (17) ◽  
pp. 2584-2586 ◽  
Author(s):  
D. T. Emerson ◽  
J. R. Shealy
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Spatial Distribution of Luminescent Centers in Organometallic Vapor Phase Epitaxy Grown ZnxCdl−xSe/InP (001)

1998 ◽  
Vol 535 ◽  
Author(s):  
X. B. Zhang ◽  
S. K. Hark
Keyword(s):  
Spatial Distribution ◽  
Band Gap ◽  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Spatial Inhomogeneity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Extended Defects ◽  
Flow Ratio ◽  
Luminescent Centers

AbstractZincblende ZnxCdl−xSe alloys were grown on (001) InP by organometallic vapor phase epitaxy (OMVPE) using various VI / H precursor flow ratios, ranging from 0.95 to 12, at a temperature of 420°C. Spatial distribution of luminescent centers in the epilayer was characterized by cathodoluminescence (CL) spectroscopy and imaging. Both near band-gap (NBE) and deep level (DLE) emissions were observed in the spectra, with the width of the NBE peak increases with the VI / II flow ratio. Monochromatic CL images showed that the broadening of the NBE peak has its origin in the spatial inhomogeneity of the luminescent centers of the epilayer. Extended defects responsible for the DLE was only found in pyramidal hillocks seen in the CL images. The density of these defects was found to increase with the VI / I1 flow ratio.

Alkoxide Doping of GaAs During Organometallic Vapor Phase Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
Y. Park ◽  
M. Skowronski ◽  
T. M. Rosseel
Keyword(s):  
Activation Energy ◽  
Band Gap ◽  
Oxygen Content ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Intensity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Fully Depleted

ABSTRACTDoping of GaAs with dimethylaluminum methoxide and its effects have been studied during metalorganic vapor phase epitaxy. Oxygen concentration decreases exponentially with increasing growth temperature and the activation energy equal to 1.8 eV.Increase of oxygen content with decrease of V/III ratio indicates that oxygen most likely occupies arsenic site. Photoluminescence intensity was observed to decrease with increasing oxygen contentand three new deep level luminescence peaks appeared at 75, 96, and 160 meV below the band gap. This, together with the fact that as-grown layers are fully depleted, indicates that oxygen is electrically active in OMVPE GaAs and forms deep non-radiative recombinationcenters.

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy
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