Observation of electrically resettable negative persistent photoconductivity in InAs/AlSb single quantum wells

1996 ◽  
Vol 69 (10) ◽  
pp. 1417-1419 ◽  
Author(s):  
Fu‐Cheng Wang ◽  
W. E. Zhang ◽  
C. H. Yang ◽  
M. J. Yang ◽  
B. R. Bennett
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Transport and persistent photoconductivity in INP/INGAAS single quantum wells

1986 ◽  
Vol 2 (4) ◽  
pp. 369-372 ◽  
Author(s):  
M.J. Kane ◽  
D.A. Anderson ◽  
L.L. Taylor ◽  
S.J. Bass
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

1986 ◽  
Vol 49 (20) ◽  
pp. 1360-1362 ◽  
Author(s):  
D. A. Anderson ◽  
S. J. Bass ◽  
M. J. Kane ◽  
L. L. Taylor
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 919-922
Author(s):  
Y.-H. Zhang ◽  
J.L. Merz ◽  
M. Potemski ◽  
J.C. Maan ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Electron Plasmas
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