Studies of film growth processes and surface structural characterization of ferroelectric memory‐compatible SrBi2Ta2O9 layered perovskites via in situ, real‐time ion‐beam analysis

1996 ◽  
Vol 69 (18) ◽  
pp. 2671-2673 ◽  
Author(s):  
O. Auciello ◽  
A. R. Krauss ◽  
J. Im ◽  
D. M. Gruen ◽  
E. A. Irene ◽  
...  
Keyword(s):  
Real Time ◽  
Structural Characterization ◽  
Film Growth ◽  
Ion Beam ◽  
Growth Processes ◽  
Beam Analysis ◽  
Ferroelectric Memory ◽  
Layered Perovskites

Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

1997 ◽  
Vol 18 (1-4) ◽  
pp. 351-368
Author(s):  
A. R. Krauss ◽  
O. Auciello ◽  
J. Im ◽  
V. Smentkowski ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Ion Beam ◽  
Ferroelectric Film ◽  
Growth Processes ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

1999 ◽  
Vol 569 ◽  
Author(s):  
V.S. Smentkowskiv ◽  
A. R. Krauss ◽  
O. Auciello ◽  
J. Im ◽  
D.M. Gruen ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Film Growth ◽  
Ion Beam ◽  
Time Of Flight ◽  
Analytical Techniques ◽  
Surface Species ◽  
Ion Scattering ◽  
Growth Processes

ABSTRACTTime-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

scholarly journals Studies of thin‐film growth, adsorption, and oxidation by in situ, real‐time, and ex situ ion beam analysis

1994 ◽  
Vol 12 (4) ◽  
pp. 1557-1564 ◽  
Author(s):  
Yuping Lin ◽  
A. R. Krauss ◽  
O. Auciello ◽  
Y. Nishino ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ex Situ ◽  
Ion Beam Analysis ◽  
Beam Analysis

Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth

1999 ◽  
Vol 569 ◽  
Author(s):  
A.H. Mueller ◽  
Y. Gao ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Ion Beam ◽  
Complex Oxide ◽  
Complex Materials ◽  
Ion Scattering ◽  
Beam Surface

ABSTRACTIn-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa2Cu3O7−δand BaSrTiO3 films.

In situ characterization of rare earth-CdTe heterostructures by ion beam analysis

1994 ◽  
Vol 249 (2) ◽  
pp. 266-270 ◽  
Author(s):  
P Gros ◽  
G Fiat ◽  
D Brun ◽  
B Daudin ◽  
J Eymery ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Beam ◽  
In Situ Characterization ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals Atmosphere influence on in-situ ion beam analysis of thin film growth

1994 ◽  
Vol 253 (1-2) ◽  
pp. 247-253 ◽  
Author(s):  
Yuping Lin ◽  
Alan R. Krauss ◽  
Robert P.H. Chang ◽  
Orlando H. Auciello ◽  
Dieter M. Gruen ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Analysis ◽  
Beam Analysis

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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