Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes

1996 ◽  
Vol 69 (23) ◽  
pp. 3569-3571 ◽  
Author(s):  
R. J. Stone ◽  
J. G. Michels ◽  
S. L. Wong ◽  
C. T. Foxon ◽  
R. J. Nicholas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Hot Electron ◽  
Coupled Quantum Well ◽  
Electron Effects

scholarly journals PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Kanothai Jarusirirangsi ◽  
Paphavee van Dommelen ◽  
Chalongrat Daengngam
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Quantum Confinement ◽  
High Energy ◽  
Hot Electrons ◽  
Hot Electron ◽  
Energy Rate ◽  
Pl Spectra ◽  
Coupled Quantum Well ◽  
Undoped Gaas

In this research, we experimentally investigated the photoluminescence (PL) spectra of an undoped GaAs/Al0.36Ga0.64As Tunnel-Coupled Quantum Well (TCQW) at 300 K and 77 K. At 300 K, PL spectra were broadened at various laser intensities due to the characteristic quantum-confinement electron levels in the active region of the TCQW during pumping excitation. At 77 K, at selected excitation intensities, the high-energy tails in the PL spectra of the studied structure corresponded with hot electron temperatures as functions of the energy of emitted photons. The average scattering energy rate of hot electrons in the system was also studied at a lattice temperature of 77 K. The average scattering energy rate of hot electrons obtained from this experimental study was in agreement with the calculated theoretical value.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

scholarly journals Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length

2000 ◽  
Vol 85 (8) ◽  
pp. 1718-1721 ◽  
Author(s):  
M. E. Gershenson ◽  
Yu. B. Khavin ◽  
D. Reuter ◽  
P. Schafmeister ◽  
A. D. Wieck
Keyword(s):  
Localization Length ◽  
Two Dimensional ◽  
Hot Electron ◽  
Electron Effects
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