Direct determination of carrier capture times in low‐dimensional semiconductor lasers: The role of quantum capture in high speed modulation

1996 ◽  
Vol 69 (11) ◽  
pp. 1585-1587 ◽  
Author(s):  
Jian Wang ◽  
Uwe A. Griesinger ◽  
Heinz Schweizer
1992 ◽  
Vol 70 (10-11) ◽  
pp. 1057-1063 ◽  
Author(s):  
Chung Y. Wu ◽  
Chang Z. Guo ◽  
J. M. Xu

The electron temperature in the active layers of a semiconductor laser can be raised higher than that of the lattice by an externally applied microwave field. This results in a reduction in the optical gain and forms the basis of laser modulation by microwave heating. The gain variation under electron gas heating is calculated. A complete small signal analysis of current modulation, electron heating modulation, and combined or microwave-assisted modulation of semiconductor lasers is presented. In addition, the sensitivities of the electron and photon responses among the three modulation schemes are compared. Some large signal simulation results of high-speed digital modulation are also included.


1988 ◽  
Vol 16 (11) ◽  
pp. 797-803
Author(s):  
Kazuhisa UOMI ◽  
Naoki CHINONE

1998 ◽  
Vol 10 (12) ◽  
pp. 1784-1786 ◽  
Author(s):  
Z.F. Fan ◽  
P.J.S. Heim ◽  
J.H. Song ◽  
Y. Hu ◽  
F.G. Johnson ◽  
...  

Author(s):  
Ming C. Wu ◽  
Connie Chang-Hasnain ◽  
Erwin K. Lau ◽  
Xiaoxue Zhao

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