Photoluminescence excitation spectra in GaAs/AlAs trench‐buried quantum wires with 20 nm wide rectangular cross‐sectional shapes

1996 ◽  
Vol 68 (3) ◽  
pp. 364-366 ◽  
Author(s):  
T. Sogawa ◽  
S. Ando ◽  
H. Ando ◽  
H. Kanbe
Keyword(s):  
Quantum Wires ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Cross Sectional ◽  
20 Nm

scholarly journals Polarization-dependent photoluminescence-excitation spectra of one-dimensional exciton and continuum states in T-shaped quantum wires

2003 ◽  
Vol 83 (10) ◽  
pp. 2043-2045 ◽  
Author(s):  
Hirotake Itoh ◽  
Yuhei Hayamizu ◽  
Masahiro Yoshita ◽  
Hidefumi Akiyama ◽  
Loren N. Pfeiffer ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
One Dimensional ◽  
Continuum States

Ultramicrotomy as a Technique for Materials Specimen Preparation

1990 ◽  
Vol 48 (2) ◽  
pp. 428-429
Author(s):  
S.R. Glanvill
Keyword(s):  
Materials Science ◽  
Structural Information ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Surfaces And Interfaces ◽  
Beam Analysis ◽  
Flat Embedding ◽  
20 Nm ◽  
Sectional Analysis

This paper summarizes the application of ultramicrotomy as a specimen preparation technique for some of the Materials Science applications encountered over the past two years. Specimens 20 nm thick by hundreds of μm lateral dimension are readily prepared for electron beam analysis. Materials examined include metals, plastics, ceramics, superconductors, glassy carbons and semiconductors. We have obtain chemical and structural information from these materials using HRTEM, CBED, EDX and EELS analysis. This technique has enabled cross-sectional analysis of surfaces and interfaces of engineering materials and solid state electronic devices, as well as interdiffusion studies across adjacent layers.Samples are embedded in flat embedding moulds with Epon 812 epoxy resin / Methyl Nadic Anhydride mixture, using DY064 accelerator to promote the reaction. The embedded material is vacuum processed to remove trapped air bubbles, thereby improving the strength and sectioning qualities of the cured block. The resin mixture is cured at 60 °C for a period of 80 hr and left to equilibrate at room temperature.

scholarly journals Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

2019 ◽  
Vol 672 ◽  
pp. 146-151 ◽  
Author(s):  
M.A. Sulimov ◽  
M.V. Yakushev ◽  
J. Márquez-Prieto ◽  
I. Forbes ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Photoluminescence Excitation ◽  
Excitation Spectra

Electroluminescence and photoluminescence excitation study of asymmetric coupledGaAs∕AlxGa1−xAsV-groove quantum wires

2004 ◽  
Vol 70 (4) ◽  
Author(s):  
K. F. Karlsson ◽  
H. Weman ◽  
M.-A. Dupertuis ◽  
K. Leifer ◽  
A. Rudra ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Photoluminescence Excitation

Abstract P137: Association Of Equol Producing Capacity With Aortic Calcification In Middle-aged Japanese Men

Circulation ◽  
2021 ◽  
Vol 143 (Suppl_1) ◽  
Author(s):  
Xiao Zhang ◽  
Akira Fujiyoshi ◽  
Aya Kadota ◽  
Vasudha Ahuja ◽  
Abhishek Vishnu ◽  
...  
Keyword(s):  
Serum Levels ◽  
Population Based ◽  
Aortic Calcification ◽  
Inverse Association ◽  
Middle Aged ◽  
Cross Sectional ◽  
Japanese Men ◽  
The Us ◽  
Multivariable Analyses ◽  
20 Nm

Background: Soy isoflavones (ISFs) are regularly consumed in Japan and other Asian countries where some studies showed a significant inverse association of ISFs intake with incident coronary heart disease (CHD). However, a US randomized clinical trial did not find ISFs as anti-atherogenic. This discrepancy may be due to the higher capacity of people in Japan than in the US to produce equol, a metabolite of ISF by the gut microbiome. Equol may have greater anti-atherogenic properties than ISFs. It is unknown whether equol producers (EP), people who produce equol after consuming ISF, have lower aortic calcification (AC), a biomarker of atherosclerosis, as compared to non-EP. Aim: To determine the association between equol producing status and AC in Japanese men. Method: This cross-sectional, population-based study included 302 Japanese men aged 40-49, free of CHD. EP was defined as participants with serum levels of equol ≥20 nM. AC was measured in the entire aorta and quantified by the Agatston method. The presence of AC was defined as AC score ≥10. We analyzed the association between equol producing status and AC using the Tobit and the logistic regressions. Result: We observed 125 participants as EP. In multivariable analyses, EP had non-significantly lower AC score by 147 (95% confidence interval (CI): -386, 92) units and an odds ratio of 0.71 (95% CI: 0.40, 1.26) for the AC presence as compared to non-EP. As significant interaction of equol producing status with age was present, we stratified the analyses by the median age. In men aged 45-49 years, EP had non-significantly lower AC score by 246 units and a non-significant 0.62 times the odds of AC presence as compared to non-EP; the corresponding values in men aged 40-44 were 12 units and 0.91 times (Table). Such an association was not observed with serum ISFs (data not shown). Conclusion: Japanese middle-aged men who were EP had non-significantly lower AC than non-EP and such association was stronger in men aged 45-49 than 40-44 years. Further study with much larger sample size is warranted.

The Relation of Thin Film Electroluminescence and Photoluminescence Excitation Spectra

1989 ◽  
pp. 105-108
Author(s):  
Zhilin Zhang ◽  
Zhuotong Li ◽  
Biao Mei ◽  
Xueyin Jiang ◽  
Peifang Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoluminescence Excitation ◽  
Excitation Spectra

scholarly journals High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

2018 ◽  
Vol 8 (9) ◽  
pp. 1553 ◽  
Author(s):  
Ming Li ◽  
Gong Chen ◽  
Ru Huang
Keyword(s):  
Cross Section ◽  
High Performance ◽  
Silicon Nanowire ◽  
Wet Etching ◽  
Excellent Performance ◽  
Cross Sectional ◽  
Triangular Cross Section ◽  
Tcad Simulation ◽  
Equivalent Distance ◽  
20 Nm

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section.

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