High quality epitaxial Si films onto γ‐Al2O3 (111)/Si (111) substrates using Al predeposition layers

1996 ◽  
Vol 68 (21) ◽  
pp. 3001-3003 ◽  
Author(s):  
Young‐Chul Jung ◽  
Hiroyuki Wado ◽  
Kentaro Ohtani ◽  
Makoto Ishida
Keyword(s):  
High Quality ◽  
Si Films

scholarly journals Toward Cost-Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High-Quality Si Films in a CaCl2-based Molten Salt

2017 ◽  
Vol 56 (47) ◽  
pp. 15078-15082 ◽  
Author(s):  
Xiao Yang ◽  
Li Ji ◽  
Xingli Zou ◽  
Taeho Lim ◽  
Ji Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molten Salt ◽  
Cost Effective ◽  
Silicon Solar Cells ◽  
High Quality ◽  
Si Films

Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

High Quality GaAs on Si by Selective Area Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
M. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
High Quality ◽  
Selective Area Epitaxy ◽  
Defect Reduction ◽  
Gaas On Si ◽  
Reduction Techniques ◽  
Selective Area ◽  
Gaas Films ◽  
Oxide Removal ◽  
Si Films

ABSTRACTSelective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.

Deposition of high quality a-Si films by an innovative “Hot Wire” CVD technique

1999 ◽  
Author(s):  
Jianping Xi ◽  
Scott Morrison ◽  
Ken Coates ◽  
Arun Madan
Keyword(s):  
Hot Wire ◽  
High Quality ◽  
Si Films

Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

2004 ◽  
Vol 451-452 ◽  
pp. 489-492 ◽  
Author(s):  
I. Tsunoda ◽  
K. Nagatomo ◽  
A. Kenjo ◽  
T. Sadoh ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Si Films

High-quality epitaxial growth of in situ phosphorus-doped Si films by promoting dispersion of native oxides in α-Si

2000 ◽  
Vol 212 (3-4) ◽  
pp. 423-428
Author(s):  
Hong-Seung Kim ◽  
Kyu-Hwan Shim ◽  
Seung-Yun Lee ◽  
Jeong-Yong Lee ◽  
Jin-Young Kang
Keyword(s):  
Epitaxial Growth ◽  
High Quality ◽  
Native Oxides ◽  
Si Films ◽  
Phosphorus Doped

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

1987 ◽  
Vol 95 ◽  
Author(s):  
Shinya Tsuda ◽  
Hisao Haku ◽  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Katsunobu Sayama ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
High Vacuum ◽  
Reaction Chamber ◽  
Wide Bandgap ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Films

AbstractIn order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

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