Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si(100)

1996 ◽  
Vol 68 (21) ◽  
pp. 2982-2984 ◽  
Author(s):  
E. Palange ◽  
G. Capellini ◽  
L. Di Gaspare ◽  
F. Evangelisti
1999 ◽  
Vol 571 ◽  
Author(s):  
G. Jin ◽  
Y.S. Tang ◽  
J.L. Liu ◽  
S.G. Thomas ◽  
K.L. Wang

ABSTRACTWe have investigated the preferential positioning of self-organized Ge quantum dots on Si (001) mesas fabricated in a selective epitaxial growth (SEG) mode of gas-source molecular beam epitaxy. The surface morphology was evaluated by atomic force microscopy, and for the Si SEG structures, showed mass accumulation at the periphery. Using micro-Raman spectroscopic imaging, the strain-field distribution of Si structures was studied before Ge deposition, and the results suggest a tensile strain at/near the periphery of the structure while a compressive strain at the center. These structures were subsequently used as a template for Ge dots, which tended to align along the mesa edge. The strain field distribution on Si mesas is speculated to be the driving force for preferential nucleation of Ge dots.


2005 ◽  
Vol 592 (1-3) ◽  
pp. 65-71 ◽  
Author(s):  
F. Xue ◽  
J. Qin ◽  
J. Cui ◽  
Y.L. Fan ◽  
Z.M. Jiang ◽  
...  

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
Vikas Baranwal ◽  
Giorgio Biasiol ◽  
Stefan Heun ◽  
Andrea Locatelli ◽  
Tevfik Onur Mentes ◽  
...  

2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.


2008 ◽  
Vol 130 (32) ◽  
pp. 10648-10655 ◽  
Author(s):  
Jennifer F. Campbell ◽  
Ingrid Tessmer ◽  
H. Holden Thorp ◽  
Dorothy A. Erie

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