AlGaAs/GaAs wire and box structures prepared by molecular‐beam epitaxial regrowth on in situ patterned GaAs substrates

1996 ◽  
Vol 68 (5) ◽  
pp. 658-660 ◽  
Author(s):  
M. López ◽  
N. Tanaka ◽  
I. Matsuyama ◽  
T. Ishikawa
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Epitaxial Regrowth ◽  
Box Structures

Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration

1999 ◽  
Vol 74 (26) ◽  
pp. 4058-4060 ◽  
Author(s):  
C. L. Chen ◽  
L. J. Mahoney ◽  
S. D. Calawa ◽  
K. M. Molvar ◽  
P. A. Maki ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Epitaxial Regrowth ◽  
Device Integration

In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures

1995 ◽  
Vol 34 (Part 2, No. 8A) ◽  
pp. L958-L961 ◽  
Author(s):  
Máximo López ◽  
Nobuyuki Tanaka ◽  
Isamu Matsuyama ◽  
Tomonori Ishikawa
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching

2002 ◽  
Vol 722 ◽  
Author(s):  
S. Kiravittaya ◽  
R. Songmuang ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Flat Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Etching Depth ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

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