Picosecond four‐wave‐mixing in GaN epilayers at 532 nm

1996 ◽  
Vol 68 (5) ◽  
pp. 587-589 ◽  
Author(s):  
Bahman Taheri ◽  
J. Hays ◽  
J. J. Song ◽  
B. Goldenberg
Keyword(s):  
1989 ◽  
Vol 173 ◽  
Author(s):  
Samson A. Jenekhe ◽  
Wen-Chang Chen ◽  
Saukwan Lo ◽  
Steven R. Flom

ABSTRACTWe have measured extremely large second hyperpolarizabilities〈γxxxx〉 in solutions of two recently prepared organic polymer semiconductor superlattices. These block copolymers are of alternating aromatic and quinoidal moieties and structurally differ by a side group substituent. The values observed are 1.6 × 10−29 esu for the parent copolymer (PBTBQ) and 3.7 × 10−30 esu for its acetoxy derivative (PBTABQ). The corresponding values of χ(3) are estimated to be 2.7 × 10−7 esu and 4.5 × 108 esu. The measurements, made by picosecond degenerate four wave mixing at 532 nm, showed that the dynamics of the larger χ(3) valued copolymer were faster than the 30 ps resolution of the instrument while the derivative exhibited a slower response. The large magnitude and rapid response of the cubic optical nonlinearities in these novel materials suggest theiT potential for further development and photonic device applications.


1997 ◽  
Vol 06 (01) ◽  
pp. 69-79 ◽  
Author(s):  
D. C. Jones

A number of transparent liquids have been evaluated for use in stimulated Brillouin scattering at 532 nm. Measurements were made of frequency shift, SBS threshold, reflectivity and optical breakdown properties. It was found that the alkanes, and in particular n-pentane, performed well and measurements were made of Brillouin gain coefficient and phonon lifetimes. It is suggested that these liquids are promising candidates for use in self-pumped phase conjugate mirrors, high gain Brillouin amplifiers and four-wave mixing mirrors.


1994 ◽  
Vol 374 ◽  
Author(s):  
Chris M. Lawson ◽  
Tianyi Zhai ◽  
David C. Gale ◽  
Gary M. Gray

AbstractNonlinear optical properties of transition metal-phosphine complexes have been measured at 532 nm by degenerate four-wave mixing. Large second-order molecular hyperpolarizabilities, γ, have been found for complexes containing two phosphine ligands. The measured γ values are closely related to the type and coordination geometry of the phosphine ligands, and the γ values vary as the fifth power of the number of substituents with π-electrons structure.


1998 ◽  
Vol 07 (04) ◽  
pp. 571-579 ◽  
Author(s):  
A. V. V. Nampoothiri ◽  
B. P. Singh ◽  
G. Ravindra Kumar

Third order nonlinear optical properties of Poly(p-phenylenevinylene) have been investigated at 532 nm using degenerate four wave mixing and Z-scan techniques. Intensity dependent absorption has been attributed to photogenerated gap states arising from one-photon π–π* transition, and the coefficient of nonlinear absorption has been estimated. The observed intensity dependence of the degenerate four wave mixing signal has been explained using four-level model involving gap state transitions.


2015 ◽  
Vol 40 (10) ◽  
pp. 2389 ◽  
Author(s):  
Benoit Sévigny ◽  
Andy Cassez ◽  
Olivier Vanvincq ◽  
Yves Quiquempois ◽  
Géraud Bouwmans

2007 ◽  
Vol 1 (3) ◽  
pp. 131-135
Author(s):  
Vitaliy Smokal ◽  
◽  
Oksana Krupka ◽  
Aleksey Kolendo ◽  
Beata Derkowska ◽  
...  

New methacrylic monomers, their polymers with benzylidene fragment were synthesized. Structures of all compounds were determined by HNMR, UV- spectroscopies. The third order nonlinear optical properties of oxazolone, thiazolidinone and thiohydantoin containing compounds were investigated in solutions using degenerate four wave mixing (DFWM) method at 532 nm.


2006 ◽  
Vol 527-529 ◽  
pp. 469-472 ◽  
Author(s):  
K. Neimontas ◽  
Arunas Kadys ◽  
R. Aleksiejūnas ◽  
Kęstutis Jarašiūnas ◽  
Gil Yong Chung ◽  
...  

We applied a non-degenerate four wave mixing (FWM) technique to investigate carrier generation, diffusion and recombination processes in PVT-grown semi-insulating wafers of 6H-SiC at 300 K. The resistivity of samples, cut from different places of a boule as well as from different boules, varied in range from a few ⋅cm up to 1010 ⋅cm. Interband excitation (at 355 nm) and below bandgap excitation (at 532 nm) allowed to study dynamics of the bipolar plasma and the contribution of deep levels to carrier generation and recombination. The nonequilibrium carrier lifetime was shorter in the samples of higher resistivity, in accordance with the increasing density of deep levels. The bipolar plasma diffusion in high-resistivity samples (~109 ⋅cm) provided the value of the diffusion coefficient D = 4.4 cm2/s and hole mobility μh = (88 ± 6) cm2/Vs.


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