scholarly journals Electron capture in GaAs quantum wells via electron‐electron and optic phonon scattering

1996 ◽  
Vol 68 (1) ◽  
pp. 117-119 ◽  
Author(s):  
K. Kálna ◽  
M. Moško ◽  
F. M. Peeters
Keyword(s):  
Quantum Wells ◽  
Electron Capture ◽  
Phonon Scattering ◽  
Optic Phonon

Polar Optic Phonon Scattering Limited-Mobility in Narrow Quantum Wells

1992 ◽  
Vol 31 (Part 1, No. 10) ◽  
pp. 3287-3291 ◽  
Author(s):  
Biswa Ranjan Nag ◽  
Sanghamitra Mukhopadhyay
Keyword(s):  
Quantum Wells ◽  
Phonon Scattering ◽  
Limited Mobility ◽  
Optic Phonon

Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1247-1250 ◽  
Author(s):  
K. Muraki ◽  
Y. Takahashi ◽  
A. Fujiwara ◽  
S. Fukatsu ◽  
Y. Shiraki
Keyword(s):  
Quantum Wells ◽  
Electron Capture ◽  
Resonant Electron ◽  
Resonant Electron Capture

Coupled Quantum-Scattering Madeling of Thermoelectric Properties of Si/Ge/Si Quantum Well Structures

2006 ◽  
Author(s):  
A. Bulusu ◽  
D. G. Walker
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Quantum Wells ◽  
Phonon Scattering ◽  
Local Density ◽  
Quantum Scattering ◽  
Local Density Of States ◽  
Quantum Well Structures ◽  
Optical Phonon Scattering ◽  
Non Equilibrium Green’S Function

Confined structures presumably offer enhanced performance of thermoelectric devices. 1) Interfaces and boundaries create scattering sites for phonons, which reduces the thermal conductivity. 2) Reduced dimensionality increases the local density of states near the Fermi level, which increases the Seebeck coefficient. From these two phenomena, the net effect should be an increase in ZT, the performance parameter used to evaluate different materials and structures. These effects have been measured and modeled, but none of the models attempts to quantify the electron-phonon coupled effects particularly in the regime where quantum and scattering influences are found. Using the non-equilibrium Green's function (NEGF) approach, quantum wells composed of Si and Ge are studied and the important physics isolated. Results show a competing effect between the decrease in the electrical conductivity due to scattering with the increase in electrical conductivity with doping, leading to 77% decrease in the value of the power factor for the case of electron-optical phonon scattering.

Electron–interface phonon scattering in quantum wells due to absorbtion and emission of interface phonons

2020 ◽  
Vol 120 ◽  
pp. 114043
Author(s):  
Ho Kim Dan ◽  
Le Dinh ◽  
Hoang Dinh Trien ◽  
Tran Cong Phong ◽  
Nguyen Dinh Hien
Keyword(s):  
Quantum Wells ◽  
Phonon Scattering ◽  
Interface Phonons

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

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