Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

1996 ◽  
Vol 68 (2) ◽  
pp. 153-155 ◽  
Author(s):  
R. Takahashi ◽  
Y. Kawamura ◽  
H. Iwamura
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching

Ultrafast All-Optical Switching Based on Inter-Subband Transition in GaN/AlGaN and InGaAs/AlAsSb Multiple Quantum Wells

2000 ◽  
Vol 11 (12) ◽  
pp. 45
Author(s):  
Osamu Wada ◽  
Haruhiko Yoshida ◽  
Teruo Mozume ◽  
Arup Neogi ◽  
Nikolai Gergiev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching

Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery

1998 ◽  
Vol 07 (01) ◽  
pp. 37-45 ◽  
Author(s):  
L. Gastaldi ◽  
C. Rigo ◽  
D. Campi ◽  
L. Faustini ◽  
C. Coriasso ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Guided Wave ◽  
Multiple Quantum ◽  
Photogenerated Carrier ◽  
Fast Recovery ◽  
All Optical ◽  
All Optical Switching

This paper focuses on photogenerated carrier nonlinearities in InGaAs/InAlAs quantum wells (QWs) that use low optical power, display a relatively fast recovery time (280 ps down to 35 ps), and excellent optical properties in terms of the sharpness of the absorption edge. A guided-wave, all-optical switching device is demonstrated as an application, at a wavelength which is of interest to telecommunication systems (1.55 μm) and requires low control energy (<0.3 pJ/pulse). A key issue here is that the controlled introduction of defects in the QW heterostructures allows the time response to be fastened significantly without being detrimental to the performance of the device in terms of on-off contrast and switching energy. The preparation procedure is compatible with metalorganic-based growth techniques widespread in optoelectronics at 1.55 μm.

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum
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