Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique

1996 ◽  
Vol 68 (13) ◽  
pp. 1817-1819 ◽  
Author(s):  
K. E. Mello ◽  
S. R. Soss ◽  
S. P. Murarka ◽  
T.‐M. Lu ◽  
S. L. Lee
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Deposition Technique ◽  
Partially Ionized ◽  
Beam Deposition

Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

1987 ◽  
Vol 51 (24) ◽  
pp. 1992-1994 ◽  
Author(s):  
C.‐H. Choi ◽  
R. A. Harper ◽  
A. S. Yapsir ◽  
T.‐M. Lu
Keyword(s):  
Epitaxial Growth ◽  
Partially Ionized ◽  
Beam Deposition

Electromigration in Al/SiO2films prepared by a partially ionized beam deposition technique

1989 ◽  
Vol 54 (24) ◽  
pp. 2443-2445 ◽  
Author(s):  
P. Li ◽  
A. S. Yapsir ◽  
K. Rajan ◽  
T.‐M. Lu
Keyword(s):  
Deposition Technique ◽  
Partially Ionized ◽  
Beam Deposition

Partially ionized beam deposition of oriented films

1989 ◽  
Vol 4 (2) ◽  
pp. 343-349 ◽  
Author(s):  
A. S. Yapsir ◽  
L. You ◽  
T. -M. Lu ◽  
M. Madden
Keyword(s):  
Room Temperature ◽  
Preferred Orientation ◽  
Deposition Technique ◽  
Drastic Reduction ◽  
Atom Ratio ◽  
Oriented Films ◽  
Partially Ionized ◽  
Fixed Bias ◽  
Orientation Growth ◽  
Beam Deposition

The microstructure of Al films deposited on SiO2 using the partially ionized beam (PIB) deposition technique is studied. It is shown that by employing less than 1% ions (ion-to-atom ratio) derived from the evaporated material and about 1–2 kV bias voltage at the substrate during deposition, one can grow highly (111) oriented Al films at room temperature. For a fixed bias potential, the value of the ion-to-atom ratio to achieve the optimum orientation effect is determined. At the optimum condition for the (111) preferred orientation growth, no significant enhancement in the grain size is observed. It is also found that a drastic reduction in the degree of the preferred orientation occurs when the films are deposited at a substrate temperature greater than 150 °C.

Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique

1991 ◽  
Vol 69 (2) ◽  
pp. 773-777 ◽  
Author(s):  
T. C. Nason ◽  
L. You ◽  
G.‐R. Yang ◽  
T.‐M. Lu
Keyword(s):  
Deposition Technique ◽  
Partially Ionized ◽  
Si Films ◽  
Beam Deposition

Structural Characteristics of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Substrates Using the Partially Ionized Beam Deposition Technique

1996 ◽  
Vol 427 ◽  
Author(s):  
K. E. Mello ◽  
S. P. Murarkak ◽  
S. L. Lee ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Ohmic Contact ◽  
Structural Characteristics ◽  
Deposition Technique ◽  
Ion Energy ◽  
Alloy Films ◽  
Partially Ionized ◽  
Beam Deposition

AbstractThe Partially ionized beam (PIB) deposition technique was used to deposit CoGe2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. For the CoGe2(001)/GaAs(100) system, which leads to an Ohmic contact, a substrate temperature of 280°C and ∼1200 eV Ge+ ions are required. Reducing the ion energy or lowering the substrate temperature both produce a different orientation in the films. Films deposited at 280°C with a zero accelerating potential for the ions, and those deposited at 200°C with -1200 eV Ge+ ions result in a CoGe2(100)//GaAs(100) type orientation domination, leading to rectifying behavior.

Reduction of interface hydrogen content by partially ionized beam deposition technique

1988 ◽  
Vol 52 (23) ◽  
pp. 1962-1964 ◽  
Author(s):  
A. S. Yapsir ◽  
T.‐M. Lu ◽  
W. A. Lanford
Keyword(s):  
Hydrogen Content ◽  
Deposition Technique ◽  
Partially Ionized ◽  
Beam Deposition

Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition

1990 ◽  
Vol 5 (5) ◽  
pp. 989-997 ◽  
Author(s):  
P. Bai ◽  
G-R. Yang ◽  
L. You ◽  
T-M. Lu ◽  
D.B. Knorr
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Intermediate Phase ◽  
X Ray Diffraction ◽  
Lattice Matching ◽  
Partially Ionized ◽  
Simple Picture ◽  
Matching Concept ◽  
Beam Deposition

The epitaxial growth of Cu on Si(111) substrate at room temperature was achieved using the Partially Ionized Beam (PIB) deposition technique in a conventional (10−4 Pa) vacuum without prior in situ cleaning of the substrate or post-annealing of the film. The beam contained ≍2% of Cu self-ions, and a bias of 0 to 4.2 kV was applied to the substrate during deposition. X-ray diffraction studies showed the existence of a twin structure in the epitaxial Cu layer deposited at 1 kV. A mechanism of epitaxial growth of Cu(111) on Si(111) substrate via an η″—Cu3Si intermediate phase is proposed. Based on the crystal structure of η″—Cu3Si, it is demonstrated that the geometrical lattice matching concept provides a simple picture of lattice continuity at the interface in this epitaxial system.

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