Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

S. Nayak; J. W. Huang; J. M. Redwing; D. E. Savage; M. G. Lagally; T. F. Kuech

doi:10.1063/1.115949

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

Applied Physics Letters ◽

10.1063/1.115949 ◽

1996 ◽

Vol 68 (9) ◽

pp. 1270-1272 ◽

Cited By ~ 8

Author(s):

S. Nayak ◽

J. W. Huang ◽

J. M. Redwing ◽

D. E. Savage ◽

M. G. Lagally ◽

...

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Cited By ~ 1

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Spacer Layer

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Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590250 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2650 ◽

Cited By ~ 15

Author(s):

M. Longo

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Morphology Evolution ◽

Mode Behavior ◽

Surface Morphology Evolution

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Surface morphology of metalorganic vapor phase epitaxy grown GaAs, GaInP for heterojunction bipolar transistor applications with nitrogen as the carrier gas

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791682 ◽

2002 ◽

Author(s):

C.C. Hsu ◽

J.B. Xu

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carrier Gas

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Surface morphology of metalorganic vapor phase epitaxy grown InAs and InGaAs observed by atomic force microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588408 ◽

1996 ◽

Vol 14 (2) ◽

pp. 1105

Author(s):

C. C. Hsu

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Force Microscopy ◽

Atomic Force

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Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.09.118 ◽

2009 ◽

Vol 311 (3) ◽

pp. 970-973 ◽

Cited By ~ 10

Author(s):

Qixin Guo ◽

Yusuke Sueyasu ◽

Yaliu Ding ◽

Tooru Tanaka ◽

Mitsuhiro Nishio

Keyword(s):

Optical Properties ◽

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Surface morphology of metalorganic vapor phase epitaxy grown strained‐layer InxGa1−xAs on GaAs observed by atomic force microscopy

Applied Physics Letters ◽

10.1063/1.114027 ◽

1995 ◽

Vol 66 (5) ◽

pp. 604-606 ◽

Cited By ~ 16

Author(s):

C. C. Hsu ◽

J. B. Xu ◽

I. H. Wilson ◽

S. M. Wang

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Strained Layer ◽

Force Microscopy ◽

Atomic Force

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The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

Technical Physics Letters ◽

10.1134/s1063785015100247 ◽

2015 ◽

Vol 41 (10) ◽

pp. 1006-1009

Author(s):

W. V. Lundin ◽

E. E. Zavarin ◽

M. G. Popov ◽

S. I. Troshkov ◽

A. V. Sakharov ◽

...

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Aluminum Content ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Heavily Doped

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Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00143-8 ◽

1999 ◽

Vol 204 (1-2) ◽

pp. 1-9 ◽

Cited By ~ 6

Author(s):

H Dumont ◽

L Auvray ◽

J Dazord ◽

Y Monteil ◽

J Bouix ◽

...

Keyword(s):

Optical Properties ◽

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Electrical And Optical Properties

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The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

Technical Physics Letters ◽

10.1134/s1063785016040192 ◽

2016 ◽

Vol 42 (4) ◽

pp. 431-434

Author(s):

W. V. Lundin ◽

E. E. Zavarin ◽

P. N. Brunkov ◽

M. A. Yagovkina ◽

S. I. Troshkov ◽

...

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Mechanical Stresses

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Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

MRS Proceedings ◽

10.1557/proc-281-345 ◽

1992 ◽

Vol 281 ◽

Author(s):

S. MIYAGAKI ◽

S. Ohkubo ◽

K. Takai ◽

N. Takagi ◽

M. Kimura ◽

...

Keyword(s):

Surface Morphology ◽

Buffer Layer ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Layer Growth ◽

Vapor Phase Epitaxy ◽

Crystal Quality ◽

Si Substrate ◽

Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

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