GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity‐band‐conduction photodetectors

1996 ◽  
Vol 68 (9) ◽  
pp. 1250-1252 ◽  
Author(s):  
B. G. Martin ◽  
H. P. Lee ◽  
E. W. Jones
Keyword(s):  
Dark Current ◽  
Impurity Band ◽  
Current Injection ◽  
Band Conduction

Blocking injected dark current in impurity‐band‐conduction photodetectors using a PtSi Schottky barrier

1995 ◽  
Vol 67 (6) ◽  
pp. 774-776 ◽  
Author(s):  
B. G. Martin ◽  
R. W. Fathauer ◽  
E. W. Jones ◽  
T. N. Krabach ◽  
S. M. Dejewski
Keyword(s):  
Schottky Barrier ◽  
Dark Current ◽  
Impurity Band ◽  
Band Conduction

IMPURITY BAND CONDUCTION STUDY BY PIEZORESISTANCE MEASUREMENTS

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU
Keyword(s):  
Impurity Band ◽  
Band Conduction

scholarly journals Impurity band conduction in Si-doped β-Ga2O3 films

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan
Keyword(s):  
Impurity Band ◽  
Si Doped ◽  
Band Conduction

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

Effect of impurity band conduction on the electrical characteristics ofn-type CuInSe2

2001 ◽  
Vol 90 (8) ◽  
pp. 3993-3997 ◽  
Author(s):  
L. Essaleh ◽  
S. M. Wasim ◽  
J. Galibert
Keyword(s):  
Impurity Band ◽  
Electrical Characteristics ◽  
Band Conduction
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