Nanometer‐scale surface modifications of YBa2Cu3O7−δ thin films using a scanning tunneling microscope

1996 ◽  
Vol 68 (25) ◽  
pp. 3632-3634 ◽  
Author(s):  
G. Bertsche ◽  
W. Clauss ◽  
D. P. Kern
Keyword(s):  
Thin Films ◽  
Scanning Tunneling Microscope ◽  
Surface Modifications ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Scale Surface

Nanoscale Etching of Metallic Perovskites Using STM

2004 ◽  
Vol 811 ◽  
Author(s):  
Ø. Dahl ◽  
S. Hallsteinsen ◽  
J. K. Grepstad ◽  
A. Borg ◽  
T. Tybell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Unit Cells

ABSTRACTIn the present work we use a scanning tunneling microscope to modify the surface structure of epitaxial SrRuO3 thin films. Point and line etching experiments were carried out in ultra-highvacuum, using tungsten tips. The point etchings showed that pulses fired at small (< 4.5V) bias voltages did not bring about any physical modifications of the film surface, while voltages in excess of4.5 V led to etched holes accompanied by mounds. Moreover, well-defined line etching was achieved with atypical depth of approximately two unit cells and linewidths as small as 5 nm. The experiments demonstrate that a scanning tunneling microscope can be used for nanometer-scale patterning of SrRuO3 thin film surfaces.

scholarly journals A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

2013 ◽  
Vol 84 (12) ◽  
pp. 123905 ◽  
Author(s):  
Anand Kamlapure ◽  
Garima Saraswat ◽  
Somesh Chandra Ganguli ◽  
Vivas Bagwe ◽  
Pratap Raychaudhuri ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Superconducting Thin Films ◽  
Tunneling Microscope ◽  
Insulating Substrates

Nanometer‐scale hole formation on graphite using a scanning tunneling microscope

1989 ◽  
Vol 55 (17) ◽  
pp. 1727-1729 ◽  
Author(s):  
T. R. Albrecht ◽  
M. M. Dovek ◽  
M. D. Kirk ◽  
C. A. Lang ◽  
C. F. Quate ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Hole Formation ◽  
Tunneling Microscope

Real-Space Imaging of Nanoscale Electrodeposited Ceramic Superlattices in the Scanning Tunneling Microscope

1992 ◽  
Vol 286 ◽  
Author(s):  
Teresa D. Golden ◽  
Ryne P. Raffaelle ◽  
Richard J. Phillips ◽  
Jay A. Switzer
Keyword(s):  
Cross Sections ◽  
Scanning Tunneling Microscope ◽  
Real Space ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Ceramic Oxides ◽  
Tunneling Microscope ◽  
Stm Images ◽  
Modulation Wavelength

ABSTRACTWe have imaged fractured cross-sections of electrodeposited ceramic oxides based on the TI-Pb-O system using a scanning tunneling microscope. The goal of this work is to measure both the modulation wavelength and compositional profile of the superlattices by mapping out the electronic properties in real space on a nanometer scale. Fourier analysis was done on STM images of all superlattices to yield the modulation wavelength. The modulation wavelength from STM was then compared with those obtained, by Faraday calculation and x-ray diffraction. The STM can be used to design “better” superlattices. We have found that the composition profile in superlattices deposited by modulating the potential was more square than in superlattices deposited by modulating the current.

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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