Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x‐ray standing waves

1996 ◽  
Vol 68 (14) ◽  
pp. 1969-1971 ◽  
Author(s):  
Tomoaki Kawamura ◽  
Hisataka Takenaka ◽  
Takayoshi Hayashi ◽  
Masami Tachikawa ◽  
Hidefumi Mori
Keyword(s):  
Domain Structure ◽  
Vapor Phase ◽  
Standing Waves ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray ◽  
Initial Domain

Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

2000 ◽  
Vol 88 (11) ◽  
pp. 6252-6259 ◽  
Author(s):  
V. Ratnikov ◽  
R. Kyutt ◽  
T. Shubina ◽  
T. Paskova ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
Andrey Nikolaev ◽  
Irina Nikitina ◽  
Andrey Zubrilov ◽  
Marina Mynbaeva ◽  
Yuriy Melnik ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Thick Layers

AbstractWe report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

scholarly journals The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

2000 ◽  
Vol 5 (S1) ◽  
pp. 138-144 ◽  
Author(s):  
Shulin Gu ◽  
Rong Zhang ◽  
Jingxi Sun ◽  
Ling Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Photoelectron Spectroscopy ◽  
Alloy Layer ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Material Surface ◽  
Sapphire Surface ◽  
X Ray ◽  
Force Microscopy

The nature and impact of ZnO buffer layers on the initial stages of the hydride vapor phase epitaxy (HVPE) of GaN have been studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), x-ray diffraction (XRD) and photoluminescence (PL). During pre-growth heating, the surface ZnO layer was found to both desorb from ZnO-coated sapphire and react with the underlying sapphire surface forming a thin ZnAl2O4 alloy layer between ZnO and sapphire surface. This ZnO-derived surface promotes the initial nucleation of the GaN and markedly improves material surface morphology, quality and growth reproducibility.

scholarly journals AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 432-437 ◽  
Author(s):  
Andrey Nikolaev ◽  
Irina Nikitina ◽  
Andrey Zubrilov ◽  
Marina Mynbaeva ◽  
Yuriy Melnik ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Thick Layers

We report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

scholarly journals Полуполярные GaN-слои на наноструктурированной Si(100)-подложке

2018 ◽  
Vol 44 (12) ◽  
pp. 45
Author(s):  
В.Н. Бессолов ◽  
Е.В. Коненкова ◽  
Т.А. Орлова ◽  
С.Н. Родин ◽  
М.П. Щеглов ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
New Method ◽  
Rocking Curve ◽  
X Ray ◽  
Polar Direction ◽  
Semipolar Gan

AbstractWe propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ω_θ ~ 60 arcmin.

Sign in / Sign up

Export Citation Format

Share Document