Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy

1995 ◽  
Vol 67 (6) ◽  
pp. 834-836 ◽  
Author(s):  
M. H. Chan ◽  
S. K. So ◽  
K. T. Chan ◽  
F. G. Kellert
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Density Measurements ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

Optical Absorptions and EL2-Like Defects in Low Temperature Grown Molecular-Beam-Epitaxial GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
S. K. So ◽  
M. H. Chan ◽  
K. T. Chan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Absorption Spectra ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Phase Spectra ◽  
Defect Densities

Abstract:The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580 °C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm−3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Vibrational Mode ◽  
The Other ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Absorption Technique

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.

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