Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

1995 ◽  
Vol 67 (16) ◽  
pp. 2284-2286 ◽  
Author(s):  
W. Qian ◽  
G. S. Rohrer ◽  
M. Skowronski ◽  
K. Doverspike ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Scanning Force Microscopy ◽  
Screw Dislocations ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Scanning Force ◽  
Open Core

Examination of Atomic (Scanning) Force Microscopy Probe Tips with the Transmission Electron Microscope

1997 ◽  
Vol 3 (3) ◽  
pp. 203-213 ◽  
Author(s):  
J.A. DeRose ◽  
J.-P. Revel
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
Scanning Force Microscopy ◽  
Image Deconvolution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Force

Abstract: We have developed a method for the examination of atomic force microscopy (scanning force microscopy) tips using a high-resolution transmission electron microscope (TEM). The tips can be imaged in a nondestructive way, enabling one to observe the shape of an atomic force microscope probe in the vicinity of the apex with high resolution. We have obtained images of atomic force microscopy probes with a resolution on the order of 1 nm. The tips can be imaged repeatedly, so one can examine tips before and after use. We have found that the tip can become blunted with use, the rate of wear depending upon the sample and tip materials and the scanning conditions. We have also found that the tips easily accrue contamination. We have studied both commercially produced tips, as well as tips grown by electron beam deposition. Direct imaging in the TEM should prove useful for image deconvolution methods because one does not have to make any assumptions concerning the general shape of the tip profile.

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

2012 ◽  
Vol 717-720 ◽  
pp. 873-876 ◽  
Author(s):  
Bui Van Pho ◽  
Shun Sadakuni ◽  
Takeshi Okamoto ◽  
Ryusuke Sagawa ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Care Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
The Relationship

A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

2014 ◽  
Vol 778-780 ◽  
pp. 394-397 ◽  
Author(s):  
Yun Ji Shin ◽  
Soo In Kim ◽  
Hyeon Jin Jung ◽  
Chang Woo Lee ◽  
Wook Bahng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Crystallographic Structure ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

Characterization of the Induced Plastic Zone in a Single Crystal TiN(001) Film by Nanoindentation and Transmission Electron Microscopy

1997 ◽  
Vol 12 (8) ◽  
pp. 2134-2142 ◽  
Author(s):  
Magnus Odén ◽  
Henrik Ljungcrantz ◽  
Lars Hultman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Plastic Zone ◽  
Slip System ◽  
Scanning Force Microscopy ◽  
Maximum Load ◽  
Microscopy Study ◽  
Transmission Electron ◽  
Scanning Force ◽  
Straight Segments

The slip system of TiN at room temperature has been determined to be {110} 〈110〉 by Burgers vector analysis using transmission electron microscopy and slip trace analysis of indents made on a TiN(001) film deposited on a MgO(001) substrate. Both small indents (0.4 mN maximum load) and large indents (40 mN maximum load) were used to study the dislocation structure in TiN. The nucleation of dislocations was investigated using small indents. Further development of the plastic zone was studied using large indents and microhardness indents (1.6 N). The critical resolved shear stress evaluated at the load when pop-in occurs was estimated to be 3.7 GPa, assuming a Hertzian elastic contact. Indents made with a 0.4 mN maximum load show a complex dislocation pattern with loops and straight segments that belong to the same slip system. Dislocations of mixed screw and edge type are dominant. The cascade of dislocations generated during pop-in is likely to nucleate from loops. For larger indents, the plastic zone extends more than three times the diameter of the imprint. The straight dislocations outside the large imprint are arranged in arrays along the 〈100〉 and 〈110〉 directions. A scanning force microscopy study of the surface outside a microhardness indent revealed a raised surface along 〈110〉 and formation of troughs along 〈100〉.

scholarly journals Taking Correlative Microscopy to a New Level

2003 ◽  
Vol 11 (4) ◽  
pp. 3-7
Author(s):  
Stephen W. Carmichael
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Light Microscopy ◽  
Wide Angle ◽  
Correlative Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We are all familiar with the concept of correlating an image acquired by light microscopy (LM) with one obtained by transmission electron microscopy (TEM). This allows us to take advantage of the “wide angle” view of LM and the high resolution of TEM. Correlative microscopy has been taken to a new level by Alvin Lin and Cynthia Goh who have designed a clever device. This device allows repetitive correlative microscopy between TEM and atomic force microscopy (AFM).

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