Fabrication of a thin film of an inorganic:organic composite via laser assisted molecular beam deposition

1995 ◽  
Vol 67 (12) ◽  
pp. 1698-1699 ◽  
Author(s):  
W. M. K. P. Wijekoon ◽  
M. Y. M. Lyktey ◽  
P. N. Prasad ◽  
J. F. Garvey
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications

2003 ◽  
Vol 768 ◽  
Author(s):  
Robert L. DeLeon ◽  
James F. Garvey ◽  
Gary S. Tompa ◽  
Richard Moore ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Molecular Beam ◽  
High Dielectric Constant ◽  
Film Surface ◽  
Rutherford Back Scattering ◽  
Molecular Beam Deposition ◽  
High Dielectric ◽  
Beam Deposition

AbstractHigh dielectric constant (k), the thermal stability and the chemical stability with respect to reaction with silicon of hafnium oxide (HfO2), and zirconium oxide (ZrO2) places them among the leading candidates for an alternative gate dielectric material. High dielectric constant HfO2 and ZrO2 thin films have successfully been deposited on silicon substrates at a temperature of 27 °C by Laser Assisted Molecular Beam Deposition (LAMBD). The LAMBD process is related to conventional Pulsed Laser Deposition (PLD). In the PLD process, the ablation plume impinges directly upon the substrate to deposit the thin film, whereas in the LAMBD process, the ablation material is expanded within a concurrently pulsed stream of a reactive gas. The gas pulse serves both to create the desired material and to transport the material to the substrate for deposition of the thin film. One advantage of the LAMBD process is that a chemically reactive carrier gas can be selected to produce the desired chemical products. Depositions yielded 35 nm to 135 nm thick HfO2, and ZrO2 films.Structural and chemical characterization of the films were performed by Auger electron spectroscopy (AES), Rutherford back-scattering (RBS), scanning electron microscopy (SEM), and x-ray diffraction (XRD). Film surface was investigated by atomic force microscopy (AFM) while optical characterization was also performed by means of spectroscopic ellipsometry (SE). Within the process window investigated, the film Hf/O and Zr/O ratios was found to be in the range 0.6 to 1.2. The as deposited films were amorphous with refraction index (RI) at 623 nm wavelength films in the range of 1.22 to 1.27 for the HfO2 and in the range of 1.23 to 1.19 for the ZrO2 films.

Molecular Oriented Thin Film of Biphenyl-4,4′-dithiol Fabricated by Molecular Beam Deposition Method

1994 ◽  
Vol 23 (7) ◽  
pp. 1223-1226
Author(s):  
Akira Tsumura ◽  
Kouji Hamano ◽  
Hiroyuki Fuchigami ◽  
Tetsuyuki Kurata ◽  
Sachiko Kohri ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Deposition Method ◽  
Molecular Beam Deposition ◽  
Beam Deposition

scholarly journals Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

2011 ◽  
Vol 99 (18) ◽  
pp. 182103 ◽  
Author(s):  
Shu Yang ◽  
Sen Huang ◽  
Hongwei Chen ◽  
Michael Schnee ◽  
Qing-Tai Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Gan Heterostructure ◽  
Beam Deposition

Progress in thin film formation by laser assisted molecular beam deposition (LAMBD)

1998 ◽  
Vol 127-129 ◽  
pp. 321-329 ◽  
Author(s):  
Robert L. DeLeon ◽  
Mukesh P. Joshi ◽  
Eric F. Rexer ◽  
Paras N. Prasad ◽  
James F. Garvey
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Film Formation ◽  
Molecular Beam Deposition ◽  
Thin Film Formation ◽  
Beam Deposition
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