Energy distribution of negative carbon ion beam extracted from a plasma-sputter-type negative ion source

2000 ◽  
Vol 71 (2) ◽  
pp. 1122-1124 ◽  
Author(s):  
H. Oomori ◽  
T. Kasuya ◽  
M. Wada ◽  
Y. Horino ◽  
N. Tsubouchi
1995 ◽  
Vol 396 ◽  
Author(s):  
Y.W. Ko ◽  
Y.O. Ahn ◽  
M.H. Sohn ◽  
Y. Park ◽  
S.I. Kim

AbstractThe initial nucleation stages of sp3 bonded amorphous diamond on silicon substrates have been investigated. The energy of the incident carbon ions/atoms is understood as a key parameter for the vapor phase formation of amorphous diamond like carbon coatings. SKION's solid state carbon ion source is used for this study. The ion source is UHV compatible and capable of producing a controlled energy ion beam in the energy range of 5-300 eV. In the initial stage of the deposition, carbon is found to be deposited as a silicon carbide up to a thickness of about 180Á at room temperature. Silicon is diffused to the surface and forms SiC. As the energy of the ion beam increases, the formation of silicon carbide becomes apparent. Further carbon ion bombardment then leads to the formation of an sp3 bonded amorphous diamond film. Post-annealing above 900°C leads to the formation of crystalline silicon resulting in a Si-rich SiC surface due to silicon out-diffusion.


1995 ◽  
Vol 396 ◽  
Author(s):  
M.H. Sohn ◽  
YO. Ahn ◽  
Y.W. Ko ◽  
Y. Park ◽  
S.I. Kim

AbstractA novel rectilinear negative carbon ion beam source for large-area coatings has been developed, based on SKION's Solid State Ion Beam Technology. The negative carbon ion beam is effectively produced by a primary cesium ion bombardment and the secondary negative carbon ion yield has been observed to be about 0.5. The ion source produces a negative carbon ion current density of 0.25 mA/cm2 at the extraction voltage of 4 kV. The ion beam energy can be independently controlled from 0 eV to 300 eV. Due to the rectilinear geometry for the production of ion beams, the scale-up of the ion beam in length direction can be easily obtained with no limit. Furthermore, the ion source uses no gas discharge to generate ion beams and does not use any hydrogen gas. The ion source can be operated in a high vacuum (<10-7 Torr), and the cesium vapors are filtered and recirculated. The ion source produces ultra-hard (50 GPa), atomically smooth (< 1 nm Ra), and hydrogen-free amorphous diamond-like-carbon (DLC) films over large areas.


2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato

2017 ◽  
Vol 180 (1-4) ◽  
pp. 157-161 ◽  
Author(s):  
P Colautti ◽  
V Conte ◽  
A Selva ◽  
S Chiriotti ◽  
A Pola ◽  
...  

2017 ◽  
Vol 43 ◽  
pp. 134-139 ◽  
Author(s):  
Matthias Prall ◽  
Anna Eichhorn ◽  
Daniel Richter ◽  
H. Immo Lehmann ◽  
Anna Constantinescu ◽  
...  

2013 ◽  
Vol 117 (4) ◽  
pp. 227-238 ◽  
Author(s):  
Liqiu Ma ◽  
Yusuke Kazama ◽  
Hirokazu Inoue ◽  
Tomoko Abe ◽  
Shin Hatakeyama ◽  
...  

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