In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy

1995 ◽  
Vol 67 (11) ◽  
pp. 1576-1578 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
In Situ Observation ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Flows ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.

Real time in situ observation of (001)GaAs in OMCVD by reflectance difference spectroscopy

1992 ◽  
Vol 60-61 ◽  
pp. 534-543 ◽  
Author(s):  
Itaru Kamiya ◽  
D.E. Aspnes ◽  
H. Tanaka ◽  
L.T. Florez ◽  
E. Colas ◽  
...  
Keyword(s):  
Real Time ◽  
In Situ Observation ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Surface reconstruction of GaAs (001) during OMCVD growth

1993 ◽  
Vol 344 (1673) ◽  
pp. 443-452 ◽  
Keyword(s):  
Surface Reconstruction ◽  
Atmospheric Pressure ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Surface Reconstructions

Surface reconstruction of GaAs (001) during organometallic chemical vapour deposition (OMCVD) growth has been investigated with reflectance-difference spectroscopy (RDS). RD spectra reveal that surface reconstructions similar or identical to (4 x 2), (2 x 4), and c (4 x 4) that occur on surface prepared by molecular beam epitaxy (MBE) in ultrahigh vacuum (UHV) occur even in atmospheric pressure OMCVD growth environments. Based on the RDS database we established on static surfaces in UHV , we studied the structure of surfaces under both static and dynamic conditions in non-UHV ambients. We find, in contrast to previous models, that the surfaces under various non-UHV conditions exhibit dimer formation. In addition, OMCVD growth and atomic layer epitaxy (ALE) typically occur under disordered c (4 x 4)[ d (4 x 4)]-like conditions where the surface is terminated by multilayers of As. When trimethylgallium (TMG) and arsine (AsH 3 ) are supplied simultaneously, the surface structure varies as a function of the supply rates of TMG and AsH 3 , and the substrate temperature.

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in GAAS

2006 ◽  
Author(s):  
A. Lastras-Martinez ◽  
I. Lara-Velazquez ◽  
R.e. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
L.f. Lastras-Martinez
Keyword(s):  
Optical Probe ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy
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