Double-modulation electro-optic sampling for pump-and-probe ultrafast correlation measurements

1998 ◽  
Vol 69 (3) ◽  
pp. 1257-1260 ◽  
Author(s):  
S. V. Frolov ◽  
Z. V. Vardeny
Keyword(s):  
Electro Optic ◽  
Pump And Probe ◽  
Double Modulation

NONLINEAR AND ELECTRO-OPTIC PROPERTIES OF II-VI SEMICONDUCTOR NANOCRYSTALS IN POLYMER AND GLASS MATRICES

1996 ◽  
Vol 03 (01) ◽  
pp. 1089-1094 ◽  
Author(s):  
U. WOGGON ◽  
O. WIND ◽  
V. SPERLING ◽  
M. PORTUNÉ ◽  
C. KLINGSHIRN
Keyword(s):  
Growth Parameters ◽  
Semiconductor Nanocrystals ◽  
Interface Properties ◽  
Wave Mixing ◽  
Present Contribution ◽  
Electro Optic ◽  
Pump And Probe ◽  
Glass Matrices ◽  
Probe Spectroscopy ◽  
Optical Behavior

In the present contribution a short overview will be given on the influence of growth parameters, matrix, and interface properties on the nonlinear and electro-optical behavior of II–VI quantum dots. The experimental techniques comprise standard experiments as pump-and-probe spectroscopy and degenerate four-wave-mixing as well as electric-field-induced absorption modulation.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti
Keyword(s):  
Free Convection ◽  
Temperature Measurement ◽  
Electro Optic

Detection of Terahertz Pulsed Radiation by using Heterodyne Electro-Optic Sampling Scheme

2012 ◽  
Vol 132 (9) ◽  
pp. 727-733
Author(s):  
Masahiko Tani ◽  
Michael I. Bakunov ◽  
Kohji Yamamoto ◽  
Kazuki Horita ◽  
Tetsuya Kinoshita ◽  
...  
Keyword(s):  
Sampling Scheme ◽  
Electro Optic

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Electro-Optic Modulator for Compensation of Third-Order Intermodulation Distortion Using Frequency Chirp Modulation

2020 ◽  
Vol E103.C (11) ◽  
pp. 653-660
Author(s):  
Daichi FURUBAYASHI ◽  
Yuta KASHIWAGI ◽  
Takanori SATO ◽  
Tadashi KAWAI ◽  
Akira ENOKIHARA ◽  
...  
Keyword(s):  
Intermodulation Distortion ◽  
Frequency Chirp ◽  
Third Order ◽  
Chirp Modulation ◽  
Electro Optic ◽  
Electro Optic Modulator

Low Chirp Modulation by Electro-Optic Intensity Modulator Using Microwave 180-Degree Hybrid Directly Formed on LiNbO3 Substrate

2015 ◽  
Vol E98.C (8) ◽  
pp. 777-782 ◽  
Author(s):  
Akira ENOKIHARA ◽  
Masashi YAMAMOTO ◽  
Tadashi KAWAI ◽  
Tetsuya KAWANISHI
Keyword(s):  
Intensity Modulator ◽  
Chirp Modulation ◽  
Electro Optic
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