Beam current density distribution of a vacuum arc ion source

1998 ◽  
Vol 69 (2) ◽  
pp. 807-809 ◽  
Author(s):  
A. G. Nikolaev ◽  
E. M. Oks ◽  
Xiaoji Zhang ◽  
Cheng Cheng
Keyword(s):  
Density Distribution ◽  
Current Density ◽  
Current Density Distribution ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

2001 ◽  
Vol 680 ◽  
Author(s):  
D.H. Chen ◽  
S.P. Wong ◽  
J.K.N. Lindner
Keyword(s):  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density ◽  
Carbon Clusters ◽  
High Dose

ABSTRACTThin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

Energy Balance on Current Density Distribution of Cathode Spot in Vacuum Arc

2019 ◽  
Vol 139 (5) ◽  
pp. 302-308 ◽  
Author(s):  
Shinji Yamamoto ◽  
Soshi Iwata ◽  
Toru Iwao ◽  
Yoshiyasu Ehara
Keyword(s):  
Energy Balance ◽  
Density Distribution ◽  
Current Density ◽  
Cathode Spot ◽  
Current Density Distribution ◽  
Vacuum Arc

Magnetoresistance Effects in Granular Thin Layers Formed by High Dose Iron Implantation Into Silicon

1997 ◽  
Vol 475 ◽  
Author(s):  
S.P. Wong ◽  
W.Y. Cheung
Keyword(s):  
Magnetic Field ◽  
Current Density ◽  
Beam Current ◽  
Implantation Dose ◽  
Ion Source ◽  
Thin Layers ◽  
Beam Current Density ◽  
High Dose ◽  
Zero Field ◽  
Mr Effect

ABSTRACTHigh dose iron implantation into silicon substrates has been performed with a metal vapor vacuum arc ion source to doses ranging from 5×1016 to 2×1017 cm'2 at various beam current densities. The magnetoresistance (MR) effects in these implanted granular layers were studied at temperatures from 15K to 300K. A positive MR effect, i.e., an increase in the resistance at the presence of a magnetic field, was observed at temperatures lower than about 40K in samples prepared under appropriate implantation conditions. The magnitude of the MR effect, defined as ΔR/Ro ≡ (R(H)-Ro)/Ro where R(H) and Ro denote respectively the resistance value at a magnetic field intensity H and that at zero field, was found to depend not only on the implantation dose but also on the beam current density. This is attributed to the beam heating effect during implantation which affects the formation of the microstructures. The ratio δR/Ro was found to attain high values larger than 400% for some samples at low temperatures. The dependence of the MR effects on temperature, implantation dose, and beam current density will be presented and discussed in conjunction with results of transmission electron microscopy.

Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2743-2749 ◽  
Author(s):  
Maryam Salehi ◽  
Ali Asghar Zavarian ◽  
Ali Arman ◽  
Fatemeh Hafezi ◽  
Ghasem Amraee Rad ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Beam Current Density ◽  
Rf Ion Source
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