Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition

1995 ◽  
Vol 67 (20) ◽  
pp. 2981-2982 ◽  
Author(s):  
K. Georgsson ◽  
N. Carlsson ◽  
L. Samuelson ◽  
W. Seifert ◽  
L. R. Wallenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Transmission Electron Microscopy Investigation ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Electron Microscopy Investigation ◽  
Metalorganic Chemical

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

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