GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

1995 ◽  
Vol 67 (20) ◽  
pp. 2960-2962 ◽  
Author(s):  
J. N. Baillargeon ◽  
K. Y. Cheng ◽  
A. Y. Cho
2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 804-810 ◽  
Author(s):  
Ichirou Nomura ◽  
Katsumi Kishino ◽  
Akihiko Kikuchi ◽  
Yawara Kaneko

1995 ◽  
Vol 38 (5) ◽  
pp. 1105-1106 ◽  
Author(s):  
J.-I Chyi ◽  
J.-H Gau ◽  
J.-L Shieh ◽  
J.-W Pan ◽  
Y.-J Chan ◽  
...  

1998 ◽  
Vol 13 (8) ◽  
pp. 936-940 ◽  
Author(s):  
N Bertru ◽  
A Baranov ◽  
Y Cuminal ◽  
G Almuneau ◽  
F Genty ◽  
...  

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  

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