Dynamic behavior of cobalt granules with annealing treatment in ion‐beam cosputtered Co22Ag78 granular film

1995 ◽  
Vol 67 (14) ◽  
pp. 2017-2019 ◽  
Author(s):  
H. Sang ◽  
S. Y. Zhang ◽  
H. Chen ◽  
G. Ni ◽  
J. M. Hong ◽  
...  
Keyword(s):  
Dynamic Behavior ◽  
Ion Beam ◽  
Annealing Treatment ◽  
Granular Film

Investigation of the Relationship between Annealing Temperature and Yield Strength in Cu Film by In Situ XRD Stress Analysis Method

2005 ◽  
Vol 490-491 ◽  
pp. 595-600 ◽  
Author(s):  
M. Qin ◽  
Vincent Ji ◽  
Y.N. Wu ◽  
S.Y. Ma ◽  
J.B. Li
Keyword(s):  
Yield Strength ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Equivalent Stress ◽  
Annealing Treatment ◽  
High Strength ◽  
Proof Stress ◽  
In Situ Xrd ◽  
Cu Film ◽  
The Relationship

A new method is applied to investigate the relationship between the yield strength and annealing temperature for a Cu film. By Ion Beam Assisted Magnetron Sputtering (IAMS), Cu film with 2.4 µm thickness was deposited on a strip of super high strength steel 37SiMnCrNiMoV, and the specimens were treated by vacuum-annealing at different temperature. The X-ray tensile test was used to measure the longitudinal and transverse stresses and applied strain for Cu film. Based on the experimental results, the equivalent stress s and the equivalent uniaxial strain t e can be obtained. According to the s- t e relation, the calculated proof stress is acquired. The results indicate that the proof stress of the film decreases with the increasing of annealing temperature. When annealing temperature rises from 150ı to 300ı, the decreasing amplitude of proof stress is the largest. The phenomenon can be explained by the recrystallization and microstructure evolution in Cu film during the annealing treatment.

Dynamic Behavior of Tungsten Surfaces due to Simultaneous Impact of Hydrogen and Carbon Ion Beam

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7529-7535 ◽  
Author(s):  
Retsuo Kawakami ◽  
Tomohisa Shimada ◽  
Yoshio Ueda ◽  
Masahiro Nishikawa
Keyword(s):  
Dynamic Behavior ◽  
Ion Beam ◽  
Carbon Ion ◽  
Simultaneous Impact ◽  
Carbon Ion Beam

Effects of Annealing on Dynamic Behavior of a Bulk Metallic Glass

2005 ◽  
Author(s):  
George P. Sunny ◽  
Vikas Prakash ◽  
John J. Lewandowski
Keyword(s):  
Metallic Glass ◽  
Strain Rate ◽  
Bulk Metallic Glass ◽  
Dynamic Behavior ◽  
High Speed ◽  
Split Hopkinson Pressure Bar ◽  
Amorphous Material ◽  
Annealing Treatment ◽  
Hopkinson Pressure Bar ◽  
Annealed Glass

Bulk metallic glasses are excellent candidate materials for integral armor because of their high strength and large elastic strain. Also, annealed glasses exhibit higher yield strengths than their fully amorphous counterparts. Therefore, the dynamic behavior of an annealed bulk metallic glass, Zr41.25Ti13.75Ni10Cu12.5Be22.5, was investigated in this study. A Split-Hopkinson Pressure Bar (SHPB) was employed to determine the stress-strain response at strain rates varying from 500/s-2000/s for the annealed glass. Also, a high-speed camera was utilized to obtain in-situ video of the specimen during the deformation process. These results were then compared to similar tests on the fully amorphous material. Finally, a new specimen design and experimental setup was proposed to promote accurate measurements from SHPB tests. During dynamic loading, the strain to failure increased as the strain-rate was increased, and the changes in strain-rate produced a larger effect than that of the annealing treatment on the failure strain. Maximum stresses were generally higher for the annealed glass, although there was some scatter. Finally, while an instability formed a dominant shear band for the as-received material, extensive fragmentation characterized the deformation after formation of an initial crack.

scholarly journals Annealing treatment of focused gallium ion beam processing of SERS gold substrate

2021 ◽  
Vol 4 (4) ◽  
pp. 043004
Author(s):  
Zhixiang Tao ◽  
Wei Zhao ◽  
Shang Wang ◽  
Boyu Zhao ◽  
Rushuai Hua ◽  
...  
Keyword(s):  
Ion Beam ◽  
Annealing Treatment ◽  
Gold Substrate

Influence of Annealing Temperature on the Antibacterial Activities and Photoactivity of N-Doped TiO2 Films by Ion Beam Assistance

2011 ◽  
Vol 189-193 ◽  
pp. 1258-1262 ◽  
Author(s):  
Xiao Ling Cheng ◽  
Yong Jun Hu ◽  
She Jun Hu ◽  
Lin Yu ◽  
Guang Rong Xie
Keyword(s):  
Photocatalytic Activity ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Annealing Treatment ◽  
Antibacterial Activities ◽  
Amorphous Structure ◽  
Vacuum Arc ◽  
E Coli ◽  
Vacuum Arc Deposition ◽  
Arc Deposition

The N-doped TiO2films were prepared by cathode vacuum arc deposition with ion beam assisted. Influence of annealing temperature on the microstructure, optical property, photocatalytic activity and antibacterial activities of the N-doped TiO2films was studied. The experimental results indicate that annealing treatment significantly affects both microstructure and photoactivity. All the as deposited N-doped TiO2films retained an amorphous structure, the crystalline structure of N-doped TiO2films annealed in the range 400°C- 600°C were examined to be of anatase structure with a (101) preferential orientation，photocatalytic activity of the N-doped TiO2film annealed at 500°C was best under visible light, The N-doped TiO2films against E. coli and S. aureus had more than 99% antibacterial rate, and the antibacterial activity of the N-doped TiO2films stronger slightly with the increase of the annealing temperature.

An Interface-Sensitive Conversion Electron Mössbauer Spectroscopic Study of the Ion Beam Induced Reactions at Fe-Si Interface.

1983 ◽  
Vol 25 ◽  
Author(s):  
V.P. Godbole ◽  
V.G. Bhide ◽  
S.V. Ghaisas ◽  
S.M. Kanetkar ◽  
R.S. Joshee ◽  
...  
Keyword(s):  
Thin Layer ◽  
Spectroscopic Study ◽  
Conversion Electron ◽  
Ion Beam ◽  
Annealing Treatment ◽  
Ion Energy ◽  
Natural Iron ◽  
Energy Processing ◽  
Directed Energy ◽  
First Time

ABSTRACTThe ion beam induced reactions at Fe-Si interface are studied for the first time using a novel interface-sensitive Mössbauer probe.The samples used in these studies are prepared by depositing a thin layer (<450A°) of enriched Fe57 isotope (95.45% by composition) on a freshly cleaned silicon (111) substrate followed by a deposition of a 150Ao film of natural iron (Fe 57 only 2.2%).These samples are subjected to Xetion bombardment at an incident ion energy of 100 keV and a dose of 6 × 1015 ions/cm2 The technique of Conversion Electron Mössbauer Spectroscopy (CEMS) is used to characterize the formation and growth of different phases as a function of annealing treatment. The spectra are leastsquare fitted using the MOSFIT programme.The MHssbauer lines for as-deposited and ion bombarded samples show a considerable broadening, which is a clear signature of a large concentration of defects formed at the interface due to ion beam induced collision cascades. As the samples are annealed the resonance lines are sharpened indicating recovery of stoichiometrically well-defined phases from an initial defective state. The present study indicates formation of FeSi and Fe3 Si phases after the annealing treatment-RBS measurements are used to confirm the mixing.These results are analyzed in terms of the non-equilibrium features of the directed energy processing of interface.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

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