scholarly journals In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature

1995 ◽  
Vol 67 (2) ◽  
pp. 244-246 ◽  
Author(s):  
V. Bardinal ◽  
R. Legros ◽  
C. Fontaine
Keyword(s):  
Refractive Index ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
In Situ Measurement ◽  
Refractive Index Dispersion

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

scholarly journals In situ measurement of humidity induced changes in the refractive index and thickness of polyethylene glycol thin films

2008 ◽  
Author(s):  
Bukem Bilen ◽  
Yani Skarlatos ◽  
Gulen Aktas ◽  
M. Naci Inci ◽  
Tugba Dispinar ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Polyethylene Glycol ◽  
In Situ Measurement ◽  
Induced Changes

scholarly journals Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 131-134 ◽  
Author(s):  
Xun Li ◽  
Erik Janzén ◽  
Anne Henry
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Specular Surface

The growth of 4H-SiC epilayers on 1.28o off-cut substrates is reported in this study and comparison when using standard 4o and 8o off-cut substrates is added. Growth at high temperature is needed for the polytype stability, whereas low C/Si is requested to decrease both triangular defects density and roughness of the grown surface. An in-situ etching with Si rich ambient allows the growth of epilayers with specular surface. The formation of Si droplets can be observed on the grown surfaces when lowering the growth temperature and appears first for the high off-cut angle.

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