A low temperature scanning tunneling microscope for use in high magnetic fields

1995 ◽  
Vol 66 (8) ◽  
pp. 4146-4149 ◽  
Author(s):  
J. G. A. Dubois ◽  
J. W. Gerritsen ◽  
J. G. H. Hermsen ◽  
H. van Kempen
2001 ◽  
Vol 72 (1) ◽  
pp. 132-135 ◽  
Author(s):  
M. Kemerink ◽  
J. W. Gerritsen ◽  
J. G. H. Hermsen ◽  
P. M. Koenraad ◽  
H. van Kempen ◽  
...  

2012 ◽  
Vol 20 (3) ◽  
pp. 8-10
Author(s):  
Stephen W. Carmichael

High-density magnetic memory is typically fabricated from ferromagnetic materials. As the density is increased and the memory elements are more densely packed, the magnetic fields of neighboring elements interfere with each other. If materials without magnetic fields, referred to as antiferromagnetic, could be manipulated to store data, such limitations theoretically could be overcome. In a breakthrough study, Sebastian Loth, Susanne Baumann, Christopher Lutz, Don Eigler, and Andreas Heinrich used a low-temperature scanning tunneling microscope (STM) to assemble a device with just 12 antiferromagnetic atoms that could be manipulated to one of two states, demonstrating the ability to store data. Until now, about one million atoms have been required to store a digital 0 or 1 in the most advanced magnetic storage systems.


2007 ◽  
Vol 50 (3) ◽  
pp. 422-423
Author(s):  
B. A. Loginov ◽  
K. N. El’tsov ◽  
S. V. Zaitsev-Zotov ◽  
A. N. Klimov ◽  
V. M. Shevlyuga

2009 ◽  
Vol 150 (1) ◽  
pp. 012007
Author(s):  
Anjan Kumar Gupta ◽  
Jaivardhan Sinha ◽  
Shyam Kumar Choudhary ◽  
Udai Raj Singh

1996 ◽  
Vol 46 (S5) ◽  
pp. 2847-2848 ◽  
Author(s):  
Hiroshi Fukuyama ◽  
Hiroki Tan ◽  
Tetsuya Handa ◽  
Tomohisa Kumakura ◽  
Masashi Morishita

1994 ◽  
Vol 65 (9) ◽  
pp. 2849-2852 ◽  
Author(s):  
J. W. G. Wildöer ◽  
A. J. A. van Roy ◽  
H. van Kempen ◽  
C. J. P. M. Harmans

2015 ◽  
Vol 86 (9) ◽  
pp. 093707 ◽  
Author(s):  
Jungdae Kim ◽  
Hyoungdo Nam ◽  
Shengyong Qin ◽  
Sang-ui Kim ◽  
Allan Schroeder ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document