Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

1995 ◽  
Vol 66 (10) ◽  
pp. 4989-4995 ◽  
Author(s):  
A. Castoldi ◽  
P. Rehak
1991 ◽  
Vol 1 (12) ◽  
pp. 1669-1673 ◽  
Author(s):  
Hans Gerd Evertz ◽  
Martin Hasenbusch ◽  
Mihail Marcu ◽  
Klaus Pinn ◽  
Sorin Solomon

Radiocarbon ◽  
2020 ◽  
pp. 1-13
Author(s):  
Alexandra Fogtmann-Schulz ◽  
Sabrina G K Kudsk ◽  
Florian Adolphi ◽  
Christoffer Karoff ◽  
Mads F Knudsen ◽  
...  

ABSTRACT We here present a comparison of methods for the pretreatment of a batch of tree rings for high-precision measurement of radiocarbon at the Aarhus AMS Centre (AARAMS), Aarhus University, Denmark. The aim was to develop an efficient and high-throughput method able to pretreat ca. 50 samples at a time. We tested two methods for extracting α-cellulose from wood to find the most optimal for our use. One method used acetic acid, the other used HCl acid for the delignification. The testing was conducted on background 14C samples, in order to assess the effect of the different pretreatment methods on low-activity samples. Furthermore, the extracted wood and cellulose fractions were analyzed using Fourier transform infrared (FTIR) spectroscopy, which showed a successful extraction of α-cellulose from the samples. Cellulose samples were pretreated at AARAMS, and the graphitization and radiocarbon analysis of these samples were done at both AARAMS and the radiocarbon dating laboratory at Lund University to compare the graphitization and AMS machine performance. No significant offset was found between the two sets of measurements. Based on these tests, the pretreatment of tree rings for high-precision radiocarbon analysis at AARAMS will henceforth use HCI for the delignification.


1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.


1995 ◽  
Vol 583 ◽  
pp. 263-267 ◽  
Author(s):  
A. Lépine-Szily ◽  
J.M. Casandjian ◽  
W. Mittig ◽  
A.C.C. Villari ◽  
R. Lichtenthäler Filho ◽  
...  

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