Total reflection x‐ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited)

1995 ◽  
Vol 66 (2) ◽  
pp. 1293-1297 ◽  
Author(s):  
P. Pianetta ◽  
N. Takaura ◽  
S. Brennan ◽  
W. Tompkins ◽  
S. S. Laderman ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fluorescence Spectroscopy ◽  
Total Reflection ◽  
Trace Impurity ◽  
Wafer Surface ◽  
X Ray ◽  
Impurity Analysis

scholarly journals High-Sensitivity Total Reflection X-Ray Fluorescence Spectroscopy of Silicon Wafers Using Synchrotron Radiation.

1995 ◽  
Vol 11 (3) ◽  
pp. 515-518 ◽  
Author(s):  
Stephen S. LADERMAN ◽  
Alice Fischer-COLBRIE ◽  
Ayako SHIMAZAKI ◽  
Kunihiro MIYAZAKI ◽  
Sean BRENNAN ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fluorescence Spectroscopy ◽  
High Sensitivity ◽  
Silicon Wafers ◽  
Total Reflection ◽  
X Ray

Update On Synchrotron Radiation TXRF: New Results

1998 ◽  
Vol 524 ◽  
Author(s):  
S. Brennan ◽  
P. Pianetta ◽  
S. Ghosh ◽  
N. Takaura ◽  
C. Wiemer ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Total Reflection ◽  
Synchrotron Source ◽  
X Ray ◽  
Non Destructive

ABSTRACTSynchrotron-based total-reflection x-ray fluorescence(SR-TXRF) has been developed as a leading technique for measuring wafer cleanliness. It holds advantages over other techniques in that it is non-destructive and allows mapping of the surface. The highest sensitivity observed thus far is 3x108 atoms/cm 2 (- 3fg) for 1000 second count time. Several applications of SR-TXRF are presented which take advantage of the energy tunability of the synchrotron source or the mapping capability.

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