Electron and x‐ray fluorescence yield measurements of the Cu L2,3‐edge x‐ray absorption fine structures: A comparative study

1995 ◽  
Vol 66 (2) ◽  
pp. 1528-1530 ◽  
Author(s):  
A. Hiraya ◽  
M. Watanabe ◽  
T. K. Sham
Keyword(s):  
Comparative Study ◽  
Fluorescence Yield ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

X-Ray Absorption Fine Structure (Xafs) Studies Of Cobalt Silicide Thin Films

1998 ◽  
Vol 524 ◽  
Author(s):  
S. J. Naftel ◽  
I Coulthard ◽  
Y. Hu ◽  
T. K. Sham ◽  
M. Zinke-Allmang
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Fluorescence Yield ◽  
Sputter Deposition ◽  
Cobalt Silicide ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

ABSTRACTCobalt silicide thin films, prepared on Si(100) wafers, have been studied by X-ray absorption near edge structures (XANES) at the Si K-, L2,3 and Co K-edges utilizing both total electron (TEY) and fluorescence yield (FLY) detection as well as extended X-ray absorption fine structure (EXAFS) at the Co K-edge. Samples made using DC sputter deposition on clean Si surfaces and MBE were studied along with a bulk CoSi2 sample. XANES and EXAFS provide information about the electronic structure and morphology of the films. It was found that the films studied have essentially the same structure as bulk CoSi2. Both the spectroscopy and materials characterization aspects of XAFS (X-ray absorption fine structures) are discussed.

scholarly journals X-ray Absorption Fine Structures of Uranyl(V) Complexes in a Nonaqueous Solution

2009 ◽  
Vol 48 (20) ◽  
pp. 9602-9604 ◽  
Author(s):  
Koichiro Takao ◽  
Satoru Tsushima ◽  
Shinobu Takao ◽  
Andreas C. Scheinost ◽  
Gert Bernhard ◽  
...  
Keyword(s):  
Nonaqueous Solution ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Uv Excitation

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

Near-Edge X-Ray Absorption Fine Structures Revealed in Core Ionization Photoelectron Spectroscopy

2013 ◽  
Vol 111 (12) ◽  
Author(s):  
M. Nakano ◽  
P. Selles ◽  
P. Lablanquie ◽  
Y. Hikosaka ◽  
F. Penent ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption

Optical Luminescence Yield X-ray Absorption Fine Structures at the Sulphur and Silicon K-edge

1993 ◽  
Vol 32 (S2) ◽  
pp. 223 ◽  
Author(s):  
T. K. Sham ◽  
X.-H. Feng ◽  
D.-T. Jiang ◽  
K. H. Tan ◽  
S. P. Frigo ◽  
...  
Keyword(s):  
X Ray ◽  
Absorption Fine ◽  
Optical Luminescence ◽  
Luminescence Yield ◽  
Fine Structures ◽  
X Ray Absorption

Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation

2007 ◽  
Vol 85 (10) ◽  
pp. 695-701 ◽  
Author(s):  
P -SG Kim ◽  
Y -H Tang ◽  
T K Sham ◽  
S T Lee
Keyword(s):  
Silicon Nanowires ◽  
Thermal Evaporation ◽  
Silicon Monoxide ◽  
Starting Material ◽  
Oxidation States ◽  
X Ray ◽  
Absorption Fine ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption

We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different substrates, (i) the wall of the furnace quartz tube, (ii) a porous silicon substrate, and (iii) a Si(100) silicon wafer. It was found that the Si K-edge XAFS of SiO exhibits identifiable spectral features characteristic of Si in 0 and 4 oxidation states as well as in intermediate oxidation states, while the SiO residue primarily shows features of Si(0) and Si(4). The XAFS suggest that SiO is not exactly a simple mixture of Si and SiO2. The silicon nanowires produced by the process exhibit morphology and luminescence property variations that depend on the nature of the substrate. X-ray excited optical luminescence (XEOL) at the O K-edge suggests an efficient energy transfer to the optical decay channel. The results and their implications are discussed.Key words: silicon nanowires, thermal evaporation, silicon monoxide, X-ray absorption fine structures, X-ray excited optical luminescence.

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