Lateral photoeffect in large area one‐dimensional thin‐film position‐sensitive detectors based in a‐Si:H P‐I‐N devices

1995 ◽  
Vol 66 (4) ◽  
pp. 2927-2934 ◽  
Author(s):  
R. Martins ◽  
E. Fortunato
1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.


2001 ◽  
Vol 383 (1-2) ◽  
pp. 310-313 ◽  
Author(s):  
E. Fortunato ◽  
D. Brida ◽  
I. Ferreira ◽  
H. Águas ◽  
P. Nunes ◽  
...  

1995 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Rodrigo Martins ◽  
Fernando Soares ◽  
Luis Fernandes

2000 ◽  
Vol 86 (3) ◽  
pp. 182-186 ◽  
Author(s):  
Elvira Fortunato ◽  
Isabel Ferreira ◽  
Franco Giuliani ◽  
Rodrigo Martins

1996 ◽  
Vol 272 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Fernando Soares ◽  
Rodrigo Martins

1988 ◽  
Vol 32 ◽  
pp. 397-406 ◽  
Author(s):  
G.M. Borgonovi ◽  
C.P. Gazza

Conventional methods of determination of residual stress in polycrystalline samples use either diffractometers or one-dimensional position-sensitive detectors. The most commonly used technique, the so-called "sin2ψ" method, requires several measurements at different angular positions of the sample. With diffractometers, two rotations are required, while with one-dimensional detectors, one rotation is required (except for the so-called single exposure technique, which requires two one-dimensional position-sensitive detectors). Rotation can be a potential source of errors if the sample is not aligned very carefully.


2003 ◽  
Vol 42 (20) ◽  
pp. 4176 ◽  
Author(s):  
Jun′ichi Kotoku ◽  
Kazuo Makishima ◽  
Yuu Okada ◽  
Hitoshi Negoro ◽  
Yukikatsu Terada ◽  
...  

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.


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