High‐electron‐mobility‐transistor gain stability and its design implications for wide band millimeter wave receivers

1995 ◽  
Vol 66 (8) ◽  
pp. 4305-4312 ◽  
Author(s):  
E. J. Wollack
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Millimeter Wave Receivers

scholarly journals An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1599 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Special Focus ◽  
High Electron ◽  
High Electron Mobility ◽  
Advantages And Disadvantages ◽  
Electron Mobility Transistors

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

Millimeter wave emission from GaN high electron mobility transistor

2004 ◽  
Vol 84 (1) ◽  
pp. 70-72 ◽  
Author(s):  
Yanqing Deng ◽  
Roland Kersting ◽  
Jingzhou Xu ◽  
Ricardo Ascazubi ◽  
Xi-Cheng Zhang ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Wave Emission
Sign in / Sign up

Export Citation Format

Share Document