scholarly journals Piezoresistive cantilevers utilized for scanning tunneling and scanning force microscope in ultrahigh vacuum

1994 ◽  
Vol 65 (6) ◽  
pp. 1923-1929 ◽  
Author(s):  
F. J. Giessibl ◽  
B. M. Trafas
Keyword(s):  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Scanning Force Microscope ◽  
Scanning Force ◽  
Piezoresistive Cantilevers

A scanning force microscope with atomic resolution in ultrahigh vacuum and at low temperatures

1998 ◽  
Vol 69 (1) ◽  
pp. 221-225 ◽  
Author(s):  
W. Allers ◽  
A. Schwarz ◽  
U. D. Schwarz ◽  
R. Wiesendanger
Keyword(s):  
Low Temperatures ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Force Microscope ◽  
Scanning Force

A low-temperature ultrahigh vacuum scanning force microscope with a split-coil magnet

2002 ◽  
Vol 73 (10) ◽  
pp. 3508-3514 ◽  
Author(s):  
M. Liebmann ◽  
A. Schwarz ◽  
S. M. Langkat ◽  
R. Wiesendanger
Keyword(s):  
Low Temperature ◽  
Ultrahigh Vacuum ◽  
Scanning Force Microscope ◽  
Scanning Force

Improvement of a dynamic scanning force microscope for highest resolution imaging in ultrahigh vacuum

2008 ◽  
Vol 79 (8) ◽  
pp. 083701 ◽  
Author(s):  
S. Torbrügge ◽  
J. Lübbe ◽  
L. Tröger ◽  
M. Cranney ◽  
T. Eguchi ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
Scanning Force Microscope ◽  
Scanning Force ◽  
Resolution Imaging ◽  
Dynamic Scanning

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Log-log scale roughness spectroscopy of surfaces

1993 ◽  
Vol 51 ◽  
pp. 224-225
Author(s):  
P. Fraundorf ◽  
B. Armbruster
Keyword(s):  
Power Spectrum ◽  
Autocorrelation Function ◽  
Power Spectra ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Lateral Structure ◽  
Scale Roughness

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.

Ultrahigh-Vacuum Electron Microscopy for Gold Nanostructures

2001 ◽  
Vol 7 (S2) ◽  
pp. 920-921
Author(s):  
Yukihito Kondo ◽  
Kimiharu Okamoto ◽  
Mikio Naruse ◽  
Toshikazu Honda ◽  
Mike Kersker
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Electronic Devices ◽  
Ultrahigh Vacuum ◽  
Gold Nanostructures ◽  
Scanning Tunneling ◽  
Nano Scale ◽  
Transmission Electron ◽  
Column Type ◽  
Schottky Type

Ultrahigh-vacuum transmission electron microscopy (UHVTEM) has become increasingly popular for the direct observation of nanostructures having clean surfaces, since industrial requirements to make and research nano-scale materials have been rapidly growing for quantum or nanoscale electronic devices. Since we have first developed high resolution UHVTEM in 1986, the UHVTEMs have been evolved with steady advances such as UHV compatible goniometer, field emission gun or etc. Furthermore, the UHVTEM started to combine analytical capabilities such as energy dispersive X-ray spectrometer, in-column type energy filter and etc., and to combine STM (scanning tunneling microscope). The UHV technology is essential for the analysis, because the portion of contaminant in a nano-scale specimen increases as the size of the specimen goes down. This paper reports the results of gold nanostructures by recently the developed UHVTEM.Figure 1 shows recently developed UHVTEM with Schottky type field emission gun.

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