The frequency response of porous silicon electroluminescent devices

1995 ◽  
Vol 67 (17) ◽  
pp. 2515-2517 ◽  
Author(s):  
C. Peng ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Frequency Response ◽  
Electroluminescent Devices

scholarly journals Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
F. Severiano ◽  
G. García ◽  
L. Castañeda ◽  
J. M. Gracia-Jiménez ◽  
Heberto Gómez-Pozos ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Electrical Characterization ◽  
Ultrasonic Spray Pyrolysis ◽  
Hole Injection ◽  
Electroluminescent Devices ◽  
Ultrasonic Spray Pyrolysis Technique ◽  
Ultrasonic Spray

Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique. Once obtained, this structure was optically and electrically characterized. When the devices were electrically polarized they showed stable electroluminescence (EL) which was presented as dots scattered over the surface. These dots can be seen with the naked eye. The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands. The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm. The electrical characterization was carried out by current-voltage curves(I-V)which show a rectifying behavior of the devices. Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.

A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Operating Speed ◽  
Small Signal ◽  
Bulk Silicon ◽  
Silicon Structure ◽  
Electroluminescent Devices ◽  
Pn Junction ◽  
Photoluminescence Lifetime ◽  
Modulation Speed

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.

Charge injection into porous silicon electroluminescent devices

1998 ◽  
Vol 51 (1-3) ◽  
pp. 141-145 ◽  
Author(s):  
G Wakefield ◽  
P.J Dobson ◽  
J.L Hutchison ◽  
Y.Y Foo
Keyword(s):  
Porous Silicon ◽  
Charge Injection ◽  
Electroluminescent Devices

scholarly journals Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

2017 ◽  
Vol 2017 ◽  
pp. 1-8
Author(s):  
F. Severiano ◽  
G. García ◽  
L. Castañeda ◽  
V. L. Gayou
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Visible Region ◽  
Electrical Characterization ◽  
Precursor Solution ◽  
Infrared Region ◽  
Dip Coating ◽  
Electromagnetic Spectrum ◽  
Sem Images ◽  
Electroluminescent Devices

We report the obtaining of electroluminescent devices (ELD) from porous silicon (PS) and indium doped zinc oxide (ZnO:In) junctions. PS presented photoluminescence (PL) in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR measurements showed the incorporation of the ZnO:In in the PS structure. Once obtained, the device was optically and electrically characterized. The ELD showed emission in the visible (450–850 nm) and infrared region (900–1200 nm) where it was electrically polarized. The visible emission was detected as luminescent spots on the surface. Electrical characterization was carried out by current-voltage (I-V) curves. The I-V curves showed rectifying behavior. It was related to the quenching of the EL with the process that takes place in the PS when it was immersed in the precursor solution of the ZnO:In.

Porous silicon electroluminescent devices

1993 ◽  
Vol 57 (1-6) ◽  
pp. 341-349 ◽  
Author(s):  
W. Lang ◽  
P. Steiner ◽  
F. Kozlowski
Keyword(s):  
Porous Silicon ◽  
Electroluminescent Devices
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