Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)

1995 ◽  
Vol 67 (9) ◽  
pp. 1292-1294 ◽  
Author(s):  
P. Schittenhelm ◽  
M. Gail ◽  
J. Brunner ◽  
J. F. Nützel ◽  
G. Abstreiter
Keyword(s):  
Three Dimensional ◽  
Two Dimensional ◽  
Photoluminescence Study ◽  
Dimensional Growth

Crystallization Time Dependence of Nanohybrid Shish-Kebab Structure in HDPE/PA66 Nanofibers Composites via Solution Crystallization

2011 ◽  
Vol 110-116 ◽  
pp. 3786-3790
Author(s):  
Wen Juan Han ◽  
Guo Qiang Zheng ◽  
Yan Yan Liang ◽  
Chun Tai Liu ◽  
Chang Yu Shen
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Time Dependence ◽  
Isothermal Crystallization ◽  
Three Dimensional ◽  
Crystallization Time ◽  
Two Dimensional ◽  
Solution Crystallization ◽  
Dimensional Growth ◽  
Scanning Electron

In this study, PA66 nanofibers were successfully solution electrospun. The crystalline morphological features of HDPE solution induced by nanofibers were investigated by scanning electron microscopy (SEM). Nanohybrid shish-kebab (NHSK) can be formed in HDPE solution via isothermal crystallization, in which PA66 nanofibers serve as shish and HDPE lamellae act as kebabs surrounding the nanofibers periodically. Additionally, crystallization time has significant effect on the structure of HDPE kebab in NHSK, i.e., as crystallization time increases, the size of the kebab increases and the crystals decorated on PA66 nanofibers exhibit a three-dimensional growth (i.e., aggregate of crystallites) rather than a two-dimensional one (i.e., disc-like lamellae normal to the axis of nanofiber).

Selective Rapid Thermal Cvd of Germanium

1989 ◽  
Vol 158 ◽  
Author(s):  
D.T. Grider ◽  
M.C. Özttürk ◽  
J.J. Wortman ◽  
M.A. Littlejohn ◽  
Y. Zhong ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Cold Wall ◽  
Two Dimensional ◽  
Mos Transistors ◽  
Thermal Cvd ◽  
Germanium Layer ◽  
Dimensional Growth ◽  
Low Pressures ◽  
Wafer Manufacturing ◽  
Rough Surface Morphology

ABSTRACTSelective depositions of germanium thin films have been investigated in a cold-wall, lamp heated rapid thermal processor. Films were deposited at low pressures (1 Torr-8 Torr) using the thermal decomposition of germane. Selectivity was maintained throughout the temperature range investigated, 350°C-600°C. Growth rates as high as 800 Å/min were obtained at 425°C where deposition is controlled by the surface reactions, making germanium compatible with the throughput requirements of single wafer manufacturing. Three dimensional growth was seen at temperatures above 450°C resulting in a rough surface morphology. Smooth films were deposited below 450°C with the films characterized by two dimensional growth. In this work, germanium is considered as a potential material to fabricate MOS transistors with raised source and drain junctions (UPMOS). Kelvin structures were fabricated to study the effect of the intermediate germanium layer between aluminum and silicon on contact resistance. It is shown that contact resistivity is improved by approximately 17% using an Al/p-Ge/p+-Si structure. In this work, it is also shown that titanium germanide formation can be used as a means of reducing the resistivity of the Ge buffer layer.

High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system

2021 ◽  
Vol 33 (11) ◽  
pp. 115603
Author(s):  
Vladimir V Dirko ◽  
Kirill A Lozovoy ◽  
Andrey P Kokhanenko ◽  
Alexander V Voitsekhovskii
Keyword(s):  
Critical Thickness ◽  
Three Dimensional ◽  
Diffraction Method ◽  
High Energy ◽  
Two Dimensional ◽  
A Value ◽  
Wide Range ◽  
Dimensional Growth ◽  
Analysis Of Dynamics ◽  
First Time

Abstract In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed systems by the reflection high-energy electron diffraction method. Detailed dependences of the periodicity parameter N of the 2 × N reconstruction on the effective thickness of the deposited material in a wide range of growth temperatures during epitaxy of germanium on a silicon surface with a crystallographic orientation (001) are obtained. Superstructural transitions and the change in the value of the parameter N at low temperatures of epitaxy in this system have been investigated for the first time. It is shown that the length of dimer rows in such a reconstruction during the growth of pure germanium on silicon can reach a value of no less than N = 11. A relationship is found between the value of the parameter N, determined by elastic strains in the system, and the critical thickness of the transition from two-dimensional to three-dimensional growth. Based on this relationship, a physical mechanism is proposed that explains the nature of the temperature dependence of the critical thickness of the Stranski–Krastanov transition, which has been the subject of constant scientific disputes until now.

Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

1991 ◽  
Vol 237 ◽  
Author(s):  
M. Lopez ◽  
Y. Takano ◽  
K. Pak ◽  
H. Yonezu
Keyword(s):  
Growth Process ◽  
Three Dimensional ◽  
High Energy ◽  
Two Dimensional ◽  
Spot Intensity ◽  
Interlayer Thickness ◽  
High Energy Electron ◽  
Initial Stage ◽  
Dimensional Growth ◽  
Si Films

ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity. From the presence of RHEED oscillations during the initial stage of the growth of Si on GaAs we infer a two-dimensional growth with nucleation on the terraces up to a thickness of 3 ML. During the posterior growth of GaAs on the pseudomorphic Si films, a tendency towards three dimensional growth was observed. This tendency increased with the Si interlayer thickness. The causes of the formation of these islands are discussed.

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