Time‐resolved temperature measurements during pulsed laser irradiation using thin film metal thermometers

1993 ◽  
Vol 64 (9) ◽  
pp. 2615-2623 ◽  
Author(s):  
D. P. Brunco ◽  
J. A. Kittl ◽  
C. E. Otis ◽  
P. M. Goodwin ◽  
Michael O. Thompson ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Temperature Measurements ◽  
Time Resolved ◽  
Pulsed Laser Irradiation

scholarly journals Overheating In Silicon During Pulsed-Laser Irradiation?

1985 ◽  
Vol 51 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Laser Irradiation ◽  
Thermal Strain ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
High Energy ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Zero Velocity ◽  
The Difference ◽  
Pulsed Laser Irradiation

ABSTRACTNanosecond resolution time-resolved x-ray diffraction measurements of thermal strain have been used to measure the interface temperatures in silicon during pulsed-laser irradiation. The pulsed-time-structure of the Cornell High Energy Synchrotron Source (CHESS) was used to measure the temperature of the liquid-solid interface of <111> silicon during melting with an interface velocity of 11 m/s, at a time of near zero velocity, and at a regrowth velocity of 6 m/s. The results of these measurements indicate 110 K difference between the temperature of the interface during melting and regrowth, and the measurement at zero velocity shows that most of the difference is associated with undercooling during the regrowth phase.

Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Measured Temperature ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Pulsed Laser Irradiation

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

Fabrication of Multi – Oxides Thin Film on Iron – Base Metal by Laser Color Marking Technique

2007 ◽  
Vol 1000 ◽  
Author(s):  
S. Kano ◽  
H. Niino ◽  
T. Sato ◽  
K. Itagaki ◽  
T. Togashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Laser Irradiation ◽  
Base Metal ◽  
Anodic Oxidation ◽  
Pulsed Laser ◽  
Fine Art ◽  
Marking Technique ◽  
Oxidation Surface ◽  
Pulsed Laser Irradiation

Coloring on stainless steel by pulsed laser irradiation seemed like anodic oxidation surface but drawing fine art. The coloring area shows monochromatic surface, not optical interference coloring. Usually color marking by laser showed rainbow color, but in this technique the coloring area showed monochromatic.... why?

Time-Resolved X-Ray Absorption of An Amorphous Si Foil During Pulsed Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
Kouichi Murakami ◽  
Hans C. Gerritsen ◽  
Hedser Van Brug ◽  
Fred Bijkerk ◽  
Frans W. Saris ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Direct Evidence ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Edge Structure ◽  
X Ray ◽  
Nanosecond Pulsed Laser ◽  
Amorphous Si ◽  
X Ray Absorption ◽  
Pulsed Laser Irradiation

ABSTRACTWe report time-resolved X-ray absorption and extended X-ray absorption fine structure (EXAFS) measurements on amorphous silicon under nanosecond pulsed-laser irradiation. Each measurement was performed with one laser shot in the X-ray energy range from 90 to 300 eV. An X-ray absorption spectrum for induced liquid Si (liq*Si) was first observed above an energy density of 0.17 J/cm2. It differs significantly from the spectrum for amorphous Si and characteristically shows the disappearance of the Si-L(II,III) edge structure at around 100 eV. This phenomenon is interpreted in terms of a significant reduction in the 3s-like character of the unfilled part of the conduction band of liq*Si compared to that of amorphous Si. This is the first direct evidence that liq*Si has a metallic-like electronic structure. Timeresolved EXAFS results are also discussed briefly.

Transformation in iron–platinum thin film via nanosecond pulsed laser irradiation

2017 ◽  
Vol 109 ◽  
pp. 46-49 ◽  
Author(s):  
Yutaka Yoshida ◽  
Shigeo Yatsu ◽  
Seiichi Watanabe ◽  
Akira Yamauchi ◽  
Jun-ichi Shibano
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Iron Platinum ◽  
Nanosecond Pulsed Laser ◽  
Platinum Thin Film ◽  
Pulsed Laser Irradiation

Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael O. Thompson
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Thin Film Sample ◽  
Absolute Accuracy ◽  
Film Sample ◽  
Velocity Measurements ◽  
Interface Position ◽  
Pulsed Laser Irradiation

ABSTRACTA transient resistance technique has been developed which allows monitoring the temperature of a thin film sample at a fixed depth from the surface following pulsed laser irradiation. The technique utilizes the temperature dependence of a thin, electrically insulated, semiconducting or metallic layer. Temperature determinations with nanosecond resolution, an absolute accuracy of ±50 K, and a relative accuracy of ±5 K are demonstrated. Combined with simultaneous interface position and velocity measurements, the undercooling at the interface during rapid solidification may be obtained. Preliminary results using this technique during the solidification of thin Ge films are presented.

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