Ultrahigh frequency thin film rf‐SQUID magnetometer with a cryogenic preamplifier employing a high‐electron‐mobility transistor

1992 ◽  
Vol 63 (11) ◽  
pp. 5403-5407 ◽  
Author(s):  
A. Cavalleri ◽  
M. Cerdonio ◽  
G. Fontana ◽  
G. Jung ◽  
R. Macchietto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Squid Magnetometer ◽  
Ultrahigh Frequency ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Squid

Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 1202 ◽  
Author(s):  
Byung Hwan Chu ◽  
Hon-way Lin ◽  
Shangjr Gwo ◽  
Yu-Lin Wang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Chloride Ion ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Ion Concentration ◽  
High Electron ◽  
Ion Detection ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AbstractChloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film in the gate region was used for real time detection of chloride ion detection. The InN thin film provided surface sites for reversible anion coordination. The sensor exhibited significant changes in channel conductance upon exposure to various concentrations of NaCl solutions. The sensor was tested over the range of 100 nM to 100 μM NaCl solutions. The effect of cations on the chloride ion detection was also studied.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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