Temperature rise and thermal rise‐time measurements of a semiconductor laser diode

1992 ◽  
Vol 63 (3) ◽  
pp. 2004-2007 ◽  
Author(s):  
H. I. Abdelkader ◽  
H. H. Hausien ◽  
J. D. Martin
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
Temperature Rise ◽  
Rise Time ◽  
Semiconductor Laser Diode

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

scholarly journals Geometry Monitoring of Rotating Parts of Power Unit with an Adapted Doppler Preprocessor

2021 ◽  
Vol 2057 (1) ◽  
pp. 012091
Author(s):  
D V Kulikov ◽  
S V Dvoynishnikov ◽  
V V Rahmanov ◽  
V A Pavlov ◽  
I K Kabardin
Keyword(s):  
Signal Processing ◽  
Semiconductor Laser ◽  
Light Source ◽  
Power Unit ◽  
Laser Diode ◽  
Semiconductor Laser Diode ◽  
Low Coherence ◽  
Signal Processing Algorithms ◽  
Processing Algorithms ◽  
Dynamic Shape

Abstract Current work is devoted to the development of a device for monitoring the dynamic shape of a power unit. The work is based on the FMCW method. The light source uses a low-coherence semiconductor laser diode. Signal processing is performed on an adapted Doppler processor. The paper describes the methods, hardware and signal processing algorithms.

13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity

2014 ◽  
Vol 12 (s2) ◽  
pp. S22502-322504
Author(s):  
Jianjun Li Jianjun Li ◽  
Shengjie Lin Shengjie Lin ◽  
Tao Liu Tao Liu ◽  
Jianchun Li Jianchun Li ◽  
Jun Deng Jun Deng ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
Optical Cavity ◽  
Semiconductor Laser Diode ◽  
Single Emitter
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