The combined use of a singly charged ion beam and undulator radiation for photoelectron spectrometry studies on atomic ions

1992 ◽  
Vol 63 (1) ◽  
pp. 1389-1392 ◽  
Author(s):  
J. M. Bizau ◽  
D. Cubaynes ◽  
M. Richter ◽  
F. Wuilleumier ◽  
J. Obert ◽  
...  
1979 ◽  
Vol 40 (C7) ◽  
pp. C7-51-C7-52
Author(s):  
M. Grössl ◽  
H. Helm ◽  
M. Langenwalter ◽  
T.D. Märk
Keyword(s):  

1984 ◽  
Vol 86 ◽  
pp. 179-182
Author(s):  
J.L. Kohl ◽  
L.K. Deutsch ◽  
L.D. Gardner ◽  
G.P. Lafyatis ◽  
A.R. Young

The major goal of this research program is to determine, experimentally, accurate absolute cross sections for dielectronic recombination (DR) in multiply and singly charged atomic ions. Our initial measurements of DR in C3+ are designed to provide a “bench mark” cross section for a simple atomic system. The experiment determines energy averaged DR cross sections for a well defined process involving a specific stabilizing transition. The fields in the region where dielectronic recombination occurs can be made small (≅ 0.25 V/cm) in order to minimize the effect of Stark mixing which is expected to enhance the DR process. We are presently adding the capability to apply known mixing fields up to 5 V/cm in the electron-ion interaction region of our apparatus.


1948 ◽  
Vol 26f (10) ◽  
pp. 419-425
Author(s):  
J. V. Jelley ◽  
E. B. Paul

The 600 kv. ion acceleration equipment that has been developed at the Ottawa Laboratory of the National Research Council is described. Details of ion source power column, and control gear are given. Using hydrogen a total ion beam of 250 to 300 μa. was obtained, of which about 80% was atomic ions.


1995 ◽  
Vol 396 ◽  
Author(s):  
Shunichi Hishita ◽  
Keiji Oyoshi ◽  
Shigeru Suehara ◽  
Takashi Aizawa

AbstractRadiation effects of 2 MeV Ar+ ions on the crystallization of copper films were investigated with or without oxygen adsorption. Metal copper films of 1-5 nm thickness deposited on SrTiO3 (100) at 300K. by evaporation consisted of fine crystals with random orientation. The crystals were grown without epitaxial relationship to the substrate by ion irradiation. The epitaxial growth of copper crystals was achieved by the combined use of oxygen adsorption and ion irradiation. The epitaxial relationship between the film and the substrate was determined Cu (100) // SrTiO3( 100) and Cu [001] // SrTiO3 [001].


2021 ◽  
Vol 129 (8) ◽  
pp. 992
Author(s):  
В.А. Иванов

We present the results of modeling the radiation of a decaying plasma, formed by the processes of electron-ion recombination with the participation of three neon ions: the molecular ion Ne2+ and atomic ions Ne+ and Ne2+. Such a combination of ions, simultaneously participating in the formation of the plasma spectrum, was first discovered in the afterglow of a pulsed barrier discharge of a cylindrical geometry at neon pressures less than 1 Torr and an electron density[e] ≤ 4 × 1010 cm-3. The main attention is paid to the comparative analysis of the mechanisms of impact-radiation recombination of Ne+ and Ne2+ ions based on the numerical solution of the system of differential equations for the densities of ions and long-lived excited atoms in the afterglow, taking into account the main elementary processes in decaying plasma with pulsed "heating" of electrons. The regularities of electron temperature relaxation from discharge values of several electron volts to 300 K in the late afterglow are considered in particular details. Comparison of the model solutions with the spectral intensities measured by the multichannel photon counting method shows that, given their good agreement in the case of singly charged ions, an adequate description of the evolution of ionic lines requires expanding the available information on the recombination of Ne2+ ions.


1983 ◽  
Vol 27 ◽  
Author(s):  
F. R. Vozzo

ABSTRACTHigh-purity, polycrystalline foils of 12 atomic percent gold Ag-Au alloy were implanted with polyatomic ions of arsenic and antimony at energies of 45 keV per atom. During fluence intervals before and after the steady state, sputtered material was collected on high-purity strips of aluminum foil. Subsequent backscattering analysis of the targets and collectors showed that significant redistribution and segregation occurred in the implanted layer, with relative depletion of silver consistently observed. The results suggested that preferentiality in sputtering is dependent on composition of an alloy and the ion beam used (even at low fluence), but there appears to be no major difference between the redistribution behavior of targets sputtered with atomic ions and equal-velocity molecular ions.A model is presented which predicts the sputtering behavior and surface configuration of a binary alloy implanted to steady state with a third species.


1991 ◽  
Vol 67 (5) ◽  
pp. 576-579 ◽  
Author(s):  
J. M. Bizau ◽  
D. Cubaynes ◽  
M. Richter ◽  
F. J. Wuilleumier ◽  
J. Obert ◽  
...  

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